PMPB20XPEA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMPB20XPEA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 7.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 245 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0235 Ohm
Paquete / Cubierta: SOT1220
Búsqueda de reemplazo de MOSFET PMPB20XPEA
Principales características: PMPB20XPEA
pmpb20xpea.pdf
PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
pmpb20xpe.pdf
PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr
pmpb20xnea.pdf
PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
pmpb20en.pdf
PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t
Otros transistores... PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP , PMPB15XPA , PMPB16EP , PMPB20XNEA , IRF1404 , PMPB23XNEA , PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA , PMPB29XPEA , PMPB30XPE , PMPB43XPEA .
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