PMV28UNEA Todos los transistores

 

PMV28UNEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV28UNEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SOT23
 

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PMV28UNEA Datasheet (PDF)

 ..1. Size:736K  nxp
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PMV28UNEA

PMV28UNEA20 V, N-channel Trench MOSFET10 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discha

 7.1. Size:325K  tysemi
 pmv28un.pdf pdf_icon

PMV28UNEA

Product specificationPMV28UN20 V, 3.3 A N-channel Trench MOSFETRev. 1 26 May 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET te

 9.1. Size:263K  nxp
 pmv280enea.pdf pdf_icon

PMV28UNEA

PMV280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology

 9.2. Size:261K  nxp
 pmv28enea.pdf pdf_icon

PMV28UNEA

PMV28ENEA30 V, N-channel Trench MOSFET9 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

MOSTRAR MÁS

Otros transistores... PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA , PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , AON7410 , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 .

History: S10H12RN

 

 
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