PSMN010-80YL Todos los transistores

 

PSMN010-80YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN010-80YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 194 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 84 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 324 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: SOT669
     - Selección de transistores por parámetros

 

PSMN010-80YL Datasheet (PDF)

 ..1. Size:731K  nxp
psmn010-80yl.pdf pdf_icon

PSMN010-80YL

PSMN010-80YLN-channel 80 V, 10 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

 6.1. Size:100K  philips
psmn010-55d.pdf pdf_icon

PSMN010-80YL

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)

 6.2. Size:100K  philips
psmn010-55d 4.pdf pdf_icon

PSMN010-80YL

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)

 6.3. Size:233K  nxp
psmn010-25ylc.pdf pdf_icon

PSMN010-80YL

PSMN010-25YLCN-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 25 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

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History: AONS420A70 | IRFN150SMD | KP8N60F | AP99LT06GP-HF | HAT2033RJ | 2N6904 | FDMC8554

 

 
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