PSMN013-60YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN013-60YL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 95 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.3 nS
Cossⓘ - Capacitancia de salida: 182 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: SOT669
Búsqueda de reemplazo de PSMN013-60YL MOSFET
PSMN013-60YL Datasheet (PDF)
psmn013-60yl.pdf

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psmn013-80ys.pdf

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psmn013-30ll.pdf

PSMN013-30LLN-channel QFN3333 30 V 13 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
Otros transistores... PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , 13N50 , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD .
History: FQI17N08TU | IGT60R190D1S | HY3606P | AM50N10-14I | SPD50N03S2L-06G | 2SK3291 | RFM5P12
History: FQI17N08TU | IGT60R190D1S | HY3606P | AM50N10-14I | SPD50N03S2L-06G | 2SK3291 | RFM5P12



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