PSMN013-60YL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN013-60YL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 95 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 53 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.3 nS

Cossⓘ - Capacitancia de salida: 182 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOT669

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PSMN013-60YL datasheet

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psmn013-60yl.pdf pdf_icon

PSMN013-60YL

PSMN013-60YL N-channel 60 V, 13 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and l

 6.1. Size:170K  philips
psmn013-100ps.pdf pdf_icon

PSMN013-60YL

PSMN013-100PS N-channel 100V 13.9m standard level MOSFET in TO220. Rev. 02 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 6.2. Size:221K  philips
psmn013-80ys.pdf pdf_icon

PSMN013-60YL

PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 6.3. Size:399K  philips
psmn013-30ll.pdf pdf_icon

PSMN013-60YL

PSMN013-30LL N-channel QFN3333 30 V 13 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due

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