PSMN021-100YL Todos los transistores

 

PSMN021-100YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN021-100YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32.3 nS
   Cossⓘ - Capacitancia de salida: 212 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOT669
 

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PSMN021-100YL Datasheet (PDF)

 ..1. Size:759K  nxp
psmn021-100yl.pdf pdf_icon

PSMN021-100YL

PSMN021-100YLN-channel 100 V, 21 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.1. Size:374K  philips
psmn023-80ls.pdf pdf_icon

PSMN021-100YL

PSMN023-80LSN-channel QFN3333 80 V 23 m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effici

 8.2. Size:225K  philips
psmn026-80ys.pdf pdf_icon

PSMN021-100YL

PSMN026-80YSN-channel LFPAK 80 V 27.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.3. Size:247K  philips
psmn028-100ys.pdf pdf_icon

PSMN021-100YL

PSMN028-100YSN-channel LFPAK 100V 27.5 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

Otros transistores... PSMN012-100YL , PSMN012-60MS , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , CS150N03A8 , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , PSMN1R0-40SSH , PSMN1R0-40ULD , PSMN1R0-40YSH , PSMN1R2-25YLD .

History: IRFH7188 | CS16N60F | PJX8802 | APM9968CO

 

 
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