PSMN1R0-40ULD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN1R0-40ULD  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 164 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 280 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 1878 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm

Encapsulados: SOT1023A

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PSMN1R0-40ULD datasheet

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 psmn1r0-40uld.pdf pdf_icon

PSMN1R0-40ULD

PSMN1R0-40ULD N-channel 40 V, 1.1 m , 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced Tre

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 psmn1r0-40ssh.pdf pdf_icon

PSMN1R0-40ULD

PSMN1R0-40SSH N-channel 40 V, 1 m , 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and low

 4.2. Size:288K  nxp
 psmn1r0-40yld.pdf pdf_icon

PSMN1R0-40ULD

PSMN1R0-40YLD N-channel 40 V 1.1 m logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli

 4.3. Size:295K  nxp
 psmn1r0-40ysh.pdf pdf_icon

PSMN1R0-40ULD

PSMN1R0-40YSH N-channel 40 V, 1 m , 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

MOSTRAR MÁS

Otros transistores... PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, PSMN1R0-25YLD, PSMN1R0-40SSH, P60NF06, PSMN1R0-40YSH, PSMN1R2-25YLD, PSMN1R5-25MLH, PSMN1R5-40YSD, PSMN1R6-30MLH, PSMN1R7-25YLD, PSMN1R7-40YLD, PSMN1R8-30MLH