PSMN1R7-25YLD Todos los transistores

PSMN1R7-25YLD N-channel 25 V, 1.75 m , 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w

PSMN1R7-25YLC N-channel 25 V 1.9 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

PSMN1R7-60BS N-channel 60 V 2 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic

PSMN1R7-40YLD N-channel 40 V, 1.8 m , 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power

isc N-Channel MOSFET Transistor PSMN1R7-60BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general