PSMN3R5-40YSD Datasheet. Equivalente

 ..1. Size:283K  nxp
 psmn3r5-40ysd.pdf

PSMN3R5-40YSD N-channel 40 V, 3.5 m , 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product data sheet 1. General description 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

 6.1. Size:238K  philips
 psmn3r5-30yl.pdf

PSMN3R5-30YL N-channel 30 V 3.5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 6.2. Size:229K  philips
 psmn3r5-80es.pdf

PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

 6.3. Size:404K  philips
 psmn3r5-30ll.pdf

PSMN3R5-30LL N-channel QFN3333 30 V 3.6 m logic level MOSFET Rev. 3 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency

 6.4. Size:235K  philips
 psmn3r5-80ps.pdf

PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 6.5. Size:329K  nxp
 psmn3r5-30yl.pdf

PSMN3R5-30YL N-channel 30 V 3.5 m logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits High efficiency due to low

 6.6. Size:818K  nxp
 psmn3r5-80es.pdf

PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

 6.7. Size:728K  nxp
 psmn3r5-25mld.pdf

PSMN3R5-25MLD N-channel 25 V, 3.72 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF

 6.8. Size:819K  nxp
 psmn3r5-80ps.pdf

PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 6.9. Size:254K  inchange semiconductor
 psmn3r5-80es.pdf

isc N-Channel MOSFET Transistor PSMN3R5-80ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 6.10. Size:261K  inchange semiconductor
 psmn3r5-80ps.pdf

isc N-Channel MOSFET Transistor PSMN3R5-80PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general