PSMN6R7-40MSD Todos los transistores

 

PSMN6R7-40MSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN6R7-40MSD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.2 nS
   Cossⓘ - Capacitancia de salida: 465 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm
   Paquete / Cubierta: SOT1210

 Búsqueda de reemplazo de MOSFET PSMN6R7-40MSD

 

PSMN6R7-40MSD Datasheet (PDF)

 ..1. Size:307K  nxp
psmn6r7-40msd.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R7-40MSDN-channel 40 V, 6.7 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description50 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

 3.1. Size:299K  nxp
psmn6r7-40mld.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R7-40MLDN-channel 40 V, 6.7 m, logic level MOSFET in LFPAK33using NextPower-S3 technology14 August 2019 Product data sheet1. General description50 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications operating at high switchin

 8.1. Size:383K  philips
psmn6r0-30yl.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 8.2. Size:222K  philips
psmn6r5-80ps.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.3. Size:324K  nxp
psmn6r0-30yld.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 8.4. Size:229K  nxp
psmn6r5-80bs.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 8.5. Size:278K  nxp
psmn6r1-30yld.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R1-30YLDN-channel 30 V, 6.1 m logic level MOSFET in LFPAK56using NextPowerS3 Technology19 September 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE

 8.6. Size:910K  nxp
psmn6r0-30ylb.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 8.7. Size:250K  nxp
psmn6r3-120es.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R3-120ESN-channel 120 V 6.7 m standard level MOSFET in I2PAK8 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low switching

 8.8. Size:898K  nxp
psmn6r5-25ylc.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R5-25YLCN-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 8.9. Size:910K  nxp
psmn6r0-25ylb.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 8.10. Size:281K  nxp
psmn6r9-100ysf.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R9-100YSFNextPower 100 V, 7 m N-channel MOSFET in LFPAK56package8 December 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 8.11. Size:288K  nxp
psmn6r4-30mld.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R4-30MLDN-channel 30 V, 6.4 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as

 8.12. Size:286K  nxp
psmn6r5-30mld.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R5-30MLDN-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as

 8.13. Size:721K  nxp
psmn6r0-25yld.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

 8.14. Size:818K  nxp
psmn6r5-80ps.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.15. Size:266K  nxp
psmn6r3-120ps.pdf

PSMN6R7-40MSD
PSMN6R7-40MSD

PSMN6R3-120PSN-channel 120 V 6.7 m standard level MOSFET in TO-2207 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low switchi

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