PSMN8R0-80YL Todos los transistores

 

PSMN8R0-80YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN8R0-80YL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 238 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 104 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 397 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: SOT669

 Búsqueda de reemplazo de MOSFET PSMN8R0-80YL

 

PSMN8R0-80YL Datasheet (PDF)

 ..1. Size:731K  nxp
psmn8r0-80yl.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R0-80YLN-channel 80 V, 8 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon an

 6.1. Size:219K  philips
psmn8r0-40ps.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R0-40PSN-channel 40 V 7.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 6.2. Size:227K  nxp
psmn8r0-40bs.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R0-40BSN-channel 40 V 7.6 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 8.1. Size:212K  philips
psmn8r3-40ys.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R3-40YSN-channel LFPAK 40 V 8.6 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.2. Size:241K  philips
psmn8r5-60ys.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFETRev. 01 22 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.3. Size:216K  philips
psmn8r2-80ys.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R2-80YSN-channel LFPAK 80 V 8.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.4. Size:216K  philips
psmn8r7-80ps.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R7-80PSN-channel 80 V 8.7 m standard level MOSFET in TO-220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 8.5. Size:250K  nxp
psmn8r5-100esf.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 8.6. Size:228K  nxp
psmn8r5-100xs.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 8.7. Size:231K  nxp
psmn8r5-108es.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-108ESN-channel 108 V 8.5 m standard level MOSFET in I2PAK13 January 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 8.8. Size:719K  nxp
psmn8r3-40ys.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R3-40YSN-channel LFPAK 40 V 8.6 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.9. Size:737K  nxp
psmn8r5-60ys.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFET22 July 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

 8.10. Size:292K  nxp
psmn8r7-100ysf.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R7-100YSFNextPower 100 V, 9 m N-channel MOSFET in LFPAK56package1 November 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 8.11. Size:220K  nxp
psmn8r5-100es.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

 8.12. Size:258K  nxp
psmn8r5-100psf.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 8.13. Size:723K  nxp
psmn8r2-80ys.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R2-80YSN-channel LFPAK 80 V 8.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.14. Size:225K  nxp
psmn8r7-80bs.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R7-80BSN-channel 80 V 8.7 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 8.15. Size:250K  nxp
psmn8r5-100ps.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 8.16. Size:301K  nxp
psmn8r5-40msd.pdf

PSMN8R0-80YL
PSMN8R0-80YL

PSMN8R5-40MSDN-channel 40 V, 8.5 m, standard level MOSFET in LFPAK33using NextPower-S3 technology10 February 2020 Product data sheet1. General description60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top

 


PSMN8R0-80YL
  PSMN8R0-80YL
  PSMN8R0-80YL
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top