PSMNR70-40SSH MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PSMNR70-40SSH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMNR70-40SSH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 425 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 2363 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0007 Ohm

Encapsulados: SOT1235

Búsqueda de reemplazo de PSMNR70-40SSH MOSFET

- Selecciónⓘ de transistores por parámetros

PSMNR70-40SSH datasheet

..1. Size:319K nxp
psmnr70-40ssh.pdf pdf_icon

PSMNR70-40SSH N-channel 40 V, 0.7 m , 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 19 June 2019 Product data sheet 1. General description 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and

6.1. Size:306K nxp
psmnr70-30ylh.pdf pdf_icon

PSMNR70-30YLH N-channel 30 V, 0.82 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap ap

9.1. Size:288K nxp
psmnr90-40ylh.pdf pdf_icon

PSMNR90-40YLH N-channel 40 V, 0.94 m , 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 26 April 2019 Product data sheet 1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance po

9.2. Size:303K nxp
psmnr60-25ylh.pdf pdf_icon

PSMNR60-25YLH N-channel 25 V, 0.7 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A, optimized for DC load switch and hot-swap a

Otros transistores... PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF, PSMN8R5-100PSF, PSMN8R5-40MSD, PSMN8R7-100YSF, PSMNR60-25YLH, PSMNR70-30YLH, IRF3710, PSMNR90-40SSH, PSMNR90-40YLH, FDMS007N08LC, FDMS2D4N03S, FDMS3D5N08LC, FDMS4D0N12C, FDMS4D5N08LC, FDMS86180

PSMNR70-40SSH Todos los transistores