FDMS4D5N08LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS4D5N08LC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 113.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 116 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 51 nC
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 834 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: POWER56
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FDMS4D5N08LC Datasheet (PDF)
fdms4d5n08lc.pdf
FDMS4D5N08LCMOSFET, N-ChannelShielded Gate,POWERTRENCH)80 V, 116 A, 4.2 mWwww.onsemi.comGeneral DescriptionThis N-Channel MV MOSFET is produced usingELECTRICAL CONNECTIONON Semiconductors advanced POWERTRENCH process thatincorporates Shielded Gate technology. This process has beenGD 5 4optimized to minimise on-state resistance and yet maintain superiorswitching
fdms4d0n12c.pdf
MOSFET - Power, SingleN-Channel, PQFN8120 V, 4.0 mW, 118 AFDMS4D0N12CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DDS ID MAX RDS(on) MAX Low QG and Capacitance to Minimize Driver Losses67 A 4.0 m @ 10 V These are Pb-free, Halogen Free / BFR Free and are RoHS120 VCompliant33 A 8.0 m @
fdms4435bz.pdf
March 2011FDMS4435BZP-Channel PowerTrench MOSFET -30 V, -18 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -9.0 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.5 A Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This Exte
fdms4435bz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918