FDWS86068-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDWS86068-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 1350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: POWER56

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FDWS86068-F085 datasheet

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FDWS86068-F085

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FDWS86068-F085

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MOSTRAR MÁS

Otros transistores... FDS8449-F085, FDS86267P, FDS8949-F085, FDS8958A-F085, FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU, FDU5N60NZTU, AON7506, FDWS86368-F085, FDWS86369-F085, FDWS86380-F085, FDWS9508L-F085, FDWS9509L-F085, FDWS9510L-F085, FDWS9520L-F085, FQA10N80C-F109