FDWS9508L-F085 Todos los transistores

 

FDWS9508L-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDWS9508L-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 2310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: POWER56
 

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FDWS9508L-F085 Datasheet (PDF)

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FDWS9508L-F085

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FDWS9508L-F085

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FDWS9508L-F085

www.onsemi.comFDWS9509L-F085 (Note1)P-Channel Logic Level Power Trench MOSFET- 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI)Applications Automotive Engi

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FDWS9508L-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Otros transistores... FDS8984-F085 , FDU3N50NZTU , FDU5N50NZTU , FDU5N60NZTU , FDWS86068-F085 , FDWS86368-F085 , FDWS86369-F085 , FDWS86380-F085 , P60NF06 , FDWS9509L-F085 , FDWS9510L-F085 , FDWS9520L-F085 , FQA10N80C-F109 , FQA11N90-F109 , FQA13N50C-F109 , FQA13N80-F109 , FQA6N90C-F109 .

History: 5N65KL-TF1-T | AS3019E

 

 
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