FDWS9508L-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDWS9508L-F085

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 2310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm

Encapsulados: POWER56

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FDWS9508L-F085 datasheet

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FDWS9508L-F085

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www.onsemi.com FDWS9509L-F085 (Note1) P-Channel Logic Level Power Trench MOSFET - 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI) Applications Automotive Engi

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FDWS9508L-F085

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MOSTRAR MÁS

Otros transistores... FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU, FDU5N60NZTU, FDWS86068-F085, FDWS86368-F085, FDWS86369-F085, FDWS86380-F085, AO4407, FDWS9509L-F085, FDWS9510L-F085, FDWS9520L-F085, FQA10N80C-F109, FQA11N90-F109, FQA13N50C-F109, FQA13N80-F109, FQA6N90C-F109