FQA11N90-F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA11N90-F109
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 72 nC
Tiempo de subida (tr): 135 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia entre drenaje y fuente RDS(on): 0.96 Ohm
Paquete / Cubierta: TO-3PN
Búsqueda de reemplazo de MOSFET FQA11N90-F109
FQA11N90-F109 Datasheet (PDF)
fqa11n90-f109.pdf
FQA11N90-F109N-Channel QFET MOSFET 900 V, 11.4 A, 960 mDescriptionThis N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V,and DMOS technology. This advanced MOSFET technology ID = 5.7 Ahas been especially tailored to reduce on-state resistance, Low
fqa11n90 fqa11n90 f109.pdf
September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi
fqa11n90c.pdf
FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching
fqa11n90c f109.pdf
September 2007 QFETFQA11N90C_F109900V N-Channel MOSFETFeatures Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 23pF)This advanced technology has been especially tailored
fqa11n90.pdf
September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi
fqa11n90c.pdf
FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching
fqa11n90.pdf
isc N-Channel MOSFET Transistor FQA11N90FEATURESDrain Current : I = 11.4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.96(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
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