FQA13N80-F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA13N80-F109N-Channel QFET MOSFET800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V,DescriptionID = 6.3 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 30 pF)planar stripe and DMOS technology. This advanced MOSFET technology has be

March 2001TMQFETFQA13N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 68 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailore

July 2007 QFETFQA13N80_F109800V N-Channel MOSFETFeatures Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especially tailored to

QFETFQA13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored to Fa

December 2013FQA13N50C_F109N-Channel QFET MOSFET500 V, 13.5 A, 480 mDescription FeaturesThese N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.75 Aplanar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC)has been especia

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 13.4A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

July 2007 FRFETFQA13N50CF500V N-Channel MOSFETFeatures Description 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tailored to

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