FQA6N90C-F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA6N90C-F109
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 198 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 90 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 2.3 Ohm
Paquete / Cubierta: TO-3PN
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FQA6N90C-F109 Datasheet (PDF)
fqa6n90c-f109.pdf
FQA6N90C-F109 N-Channel QFET MOSFETDescription900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 Astripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3
fqa6n90c f109.pdf
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