FQA6N90C-F109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA6N90C-F109

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 198 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm

Encapsulados: TO-3PN

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FQA6N90C-F109 datasheet

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 fqa6n90c-f109.pdf pdf_icon

FQA6N90C-F109

FQA6N90C-F109 N-Channel QFET MOSFET Description 900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 A stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

 6.1. Size:797K  fairchild semi
 fqa6n90c f109.pdf pdf_icon

FQA6N90C-F109

September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored t

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 fqa6n90.pdf pdf_icon

FQA6N90C-F109

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es

 9.1. Size:564K  fairchild semi
 fqa6n70.pdf pdf_icon

FQA6N90C-F109

December 2000 TM QFET QFET QFET QFET FQA6N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology is espe

MOSTRAR MÁS

Otros transistores... FDWS9508L-F085, FDWS9509L-F085, FDWS9510L-F085, FDWS9520L-F085, FQA10N80C-F109, FQA11N90-F109, FQA13N50C-F109, FQA13N80-F109, RFP50N06, FQA7N80C-F109, FQA8N90C-F109, FQA90N15-F109, FQA9N90_F109, FQA9N90C_F109, FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C