FQA6N90C-F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA6N90C-F109 Datasheet (PDF)

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FQA6N90C-F109 N-Channel QFET MOSFETDescription900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 Astripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

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September 2007 QFETFQA6N90C_F109900V N-Channel MOSFETFeatures Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 11pF)This advanced technology has been especially tailored t

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April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

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December 2000TMQFETQFETQFETQFETFQA6N70700V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology is espe