FQA8N90C-F109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA8N90C-F109

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm

Encapsulados: TO-3PN

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FQA8N90C-F109 datasheet

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 fqa8n90c-f109.pdf pdf_icon

FQA8N90C-F109

FQA8N90C-F109 N-Channel QFET MOSFET Description 900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 V stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

 6.1. Size:807K  fairchild semi
 fqa8n90c f109.pdf pdf_icon

FQA8N90C-F109

November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to

 6.2. Size:690K  fairchild semi
 fqa8n90c.pdf pdf_icon

FQA8N90C-F109

TM QFET FQA8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast s

 9.1. Size:460K  fairchild semi
 fqa8n100c.pdf pdf_icon

FQA8N90C-F109

September 2005 QFET FQA8N100C 1000V N-Channel MOSFET Features Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 53 nC) DMOS technology. Low Crss (typical 16 pF) This advanced technology has been especially tailored

MOSTRAR MÁS

Otros transistores... FDWS9510L-F085, FDWS9520L-F085, FQA10N80C-F109, FQA11N90-F109, FQA13N50C-F109, FQA13N80-F109, FQA6N90C-F109, FQA7N80C-F109, AO3407, FQA90N15-F109, FQA9N90_F109, FQA9N90C_F109, FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C, FQD3N60CTM-WS, FQD4P25TM-WS