NTBLS001N06C Todos los transistores

 

NTBLS001N06C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTBLS001N06C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 284 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 422 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 5973 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm
   Paquete / Cubierta: MO299A
 

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NTBLS001N06C Datasheet (PDF)

 ..1. Size:395K  onsemi
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NTBLS001N06C

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANTBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.9 mW @ 10 VCompliant60 V422 A1.4 mW @ 6 VApplications

 7.1. Size:385K  onsemi
ntbls002n08mc.pdf pdf_icon

NTBLS001N06C

NTBLS002N08MCMOSFET - Power, SingleN-Channel, TOLL80 V, 2 mW, 238 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2 mW @ 10 V80 V 238 ATypical Applications5 mW @ 6

 8.1. Size:397K  onsemi
ntbls0d7n06c.pdf pdf_icon

NTBLS001N06C

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANTBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.75 mW @ 10 VCompliant60 V470 A1.2 mW @ 6 VTypical App

 9.1. Size:415K  onsemi
ntbls4d0n15mc.pdf pdf_icon

NTBLS001N06C

MOSFET Single N-Channel150 V, 4.4 mW, 187 ANTBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187 ATypical Applications4.9 mW @ 8 V

Otros transistores... NTB150N65S3HF , NTB190N65S3HF , NTBG020N120SC1 , NTBG040N120SC1 , NTBG060N090SC1 , NTBG160N120SC1 , NTBGS4D1N15MC , NTBGS6D5N15MC , 2N7002 , NTBLS002N08MC , NTBLS0D7N06C , NTBLS1D5N08MC , NTBLS4D0N15MC , NTBS2D7N06M7 , NTBS9D0N10MC , NTBV5605 , NTD360N80S3Z .

History: ST16N10 | IXFP72N20X3M | IXFY36N20X3 | AOB413 | 12N65KL-TA | IRHY57234CMSE | STU9HN65M2

 

 
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