NTH4L040N120SC1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTH4L040N120SC1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 319 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 137 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm

Encapsulados: TO247-4L

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NTH4L040N120SC1 datasheet

 0.1. Size:363K  onsemi
 nth4l040n120sc1.pdf pdf_icon

NTH4L040N120SC1

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 40 mW, 58 A NTH4L040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 56 mW @ 20 V 58 A TJ = 175 C This Device is Pb-Free and is RoHS Compliant

 5.1. Size:965K  onsemi
 nth4l040n65s3f.pdf pdf_icon

NTH4L040N120SC1

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW NTH4L040N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(ON)

 8.1. Size:525K  onsemi
 nth4l027n65s3f.pdf pdf_icon

NTH4L040N120SC1

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored

 8.2. Size:369K  onsemi
 nth4l020n120sc1.pdf pdf_icon

NTH4L040N120SC1

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 20 mW, 102 A NTH4L020N120SC1 Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 28 mW @ 20 V 102 A TJ = 175 C This Device is Pb-Free and is RoHS Complian

MOSTRAR MÁS

Otros transistores... NTD360N80S3Z, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1, NTH4L027N65S3F, IRFZ44, NTH4L040N65S3F, NTH4L080N120SC1, NTH4L160N120SC1, NTHD4P02F, NTHL020N090SC1, NTHL020N120SC1, NTHL027N65S3HF, NTHL033N65S3HF