NTHL020N090SC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFET SiC Power, SingleN-Channel, TO247-3L900 V, 20 mW, 118 ANTHL020N090SC1Featureswww.onsemi.com Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 196 nC)V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (Coss = 296 pF)900 V 28 mW @ 15 V 118 A 100% UIL Tested RoHS CompliantDTypica

MOSFET - SiC Power, SingleN-ChannelNTHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 203 nC) Capacitance (Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 28 mW @ 20 V 103 ATypical Applications UPSN-CHANNEL MOSFET DC/DC ConverterD

NTHL027N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)

NTHL095N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 36 A, 95 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 95 mW @ 10 V 36 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc

NTHL033N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 70 A, 33 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 33 mW @ 10 V 70 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc

NTHL050N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 58 A, 50 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 50 mW 58 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced tech

NTHL040N65S3FMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advanced

MOSFET - SiC Power, SingleN-Channel900 V, 60 mW, 46 ANTHL060N090SC1Features Typ. RDS(on) = 60 mW Ultra Low Gate Charge (typ. QG(tot) = 87 nC)www.onsemi.com Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested These Devices are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAXTypical Applications900 V 84 mW @ 15 V 46 A UPS DC/DC Converte

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFET

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFE

www.onsemi.comNTHL082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)

MOSFET - SiC Power, SingleN-Channel1200 V, 40 mW, 60 ANTHL040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 106 nC) Low Effective Output Capacitance (typ. Coss = 140 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 56 mW @ 20 V 60 ATypical Applications UPSN-CHANNEL MOSFE

NTHL040N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to

isc N-Channel MOSFET Transistor NTHL040N65S3FFEATURESWith TO-247 packagingLow R