NTHL020N120SC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTHL020N120SC1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 535 W
Voltaje máximo drenador - fuente |Vds|: 1200 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 103 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.3 V
Carga de la puerta (Qg): 203 nC
Tiempo de subida (tr): 57 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET NTHL020N120SC1
NTHL020N120SC1 Datasheet (PDF)
nthl020n120sc1.pdf
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nthl040n120sc1.pdf
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NTHL040N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to
nthl040n65s3f.pdf
isc N-Channel MOSFET Transistor NTHL040N65S3FFEATURESWith TO-247 packagingLow R
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