NTHL020N120SC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTHL020N120SC1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 535 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 103 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.3 V
   Qgⓘ - Carga de la puerta: 203 nC
   trⓘ - Tiempo de subida: 57 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO-247

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NTHL020N120SC1 Datasheet (PDF)

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nthl020n120sc1.pdf

MOSFET - SiC Power, SingleN-ChannelNTHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 203 nC) Capacitance (Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 28 mW @ 20 V 103 ATypical Applications UPSN-CHANNEL MOSFET DC/DC ConverterD

6.1. Size:335K onsemi
nthl020n090sc1.pdf

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nthl095n65s3hf.pdf

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9.2. Size:448K onsemi
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9.3. Size:448K onsemi
nthl050n65s3hf.pdf

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9.4. Size:510K onsemi
nthl040n65s3f.pdf

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nthl080n120sc1.pdf

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9.7. Size:286K onsemi
nthl080n120sc1a.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFE

9.8. Size:848K onsemi
nthl082n65s3f.pdf

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9.9. Size:312K onsemi
nthl040n120sc1.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 40 mW, 60 ANTHL040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 106 nC) Low Effective Output Capacitance (typ. Coss = 140 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 56 mW @ 20 V 60 ATypical Applications UPSN-CHANNEL MOSFE

9.10. Size:399K onsemi
nthl040n65s3hf.pdf

NTHL040N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to

9.11. Size:266K inchange semiconductor
nthl040n65s3f.pdf