NTHL080N120SC1A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTHL080N120SC1A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 178 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: TO-247
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NTHL080N120SC1A datasheet
..1. Size:363K onsemi
nthl080n120sc1.pdf 
MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NTHL080N120SC1 Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant 1200 V 110 mW @ 20 V 31 A Typical Applications UPS N-CHANNEL MOSFET
0.1. Size:286K onsemi
nthl080n120sc1a.pdf
MOSFET - SiC Power, Single N-Channel 1200 V, 80 mW, 31 A NTHL080N120SC1A Features Typ. RDS(on) = 80 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant 1200 V 110 mW @ 20 V 31 A Typical Applications UPS N-CHANNEL MOSFE
8.1. Size:848K onsemi
nthl082n65s3f.pdf
www.onsemi.com NTHL082N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 m Features Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)
9.1. Size:445K onsemi
nthl095n65s3hf.pdf
NTHL095N65S3HF MOSFET Power, N Channel, SUPERFET III, FRFET www.onsemi.com 650 V, 36 A, 95 mW Description VDSS RDS(ON) MAX ID MAX SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 95 mW @ 10 V 36 A balance technology for outstanding low on-resistance and lower gate charge performance. This advanc
9.2. Size:448K onsemi
nthl033n65s3hf.pdf
NTHL033N65S3HF MOSFET Power, N Channel, SUPERFET III, FRFET www.onsemi.com 650 V, 70 A, 33 mW Description VDSS RDS(ON) MAX ID MAX SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 33 mW @ 10 V 70 A balance technology for outstanding low on-resistance and lower gate charge performance. This advanc
9.3. Size:448K onsemi
nthl050n65s3hf.pdf
NTHL050N65S3HF MOSFET Power, N Channel, SUPERFET III, FRFET www.onsemi.com 650 V, 58 A, 50 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 50 mW 58 A balance technology for outstanding low on-resistance and lower gate charge performance. This advanced tech
9.4. Size:510K onsemi
nthl040n65s3f.pdf
NTHL040N65S3F MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 40 mW @ 10 V 65 A charge performance. This advanced
9.5. Size:768K onsemi
nthl060n090sc1.pdf
MOSFET - SiC Power, Single N-Channel 900 V, 60 mW, 46 A NTHL060N090SC1 Features Typ. RDS(on) = 60 mW Ultra Low Gate Charge (typ. QG(tot) = 87 nC) www.onsemi.com Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested These Devices are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Typical Applications 900 V 84 mW @ 15 V 46 A UPS DC/DC Converte
9.6. Size:312K onsemi
nthl040n120sc1.pdf
MOSFET - SiC Power, Single N-Channel 1200 V, 40 mW, 60 A NTHL040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 106 nC) Low Effective Output Capacitance (typ. Coss = 140 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 56 mW @ 20 V 60 A Typical Applications UPS N-CHANNEL MOSFE
9.7. Size:335K onsemi
nthl020n090sc1.pdf
MOSFET SiC Power, Single N-Channel, TO247-3L 900 V, 20 mW, 118 A NTHL020N090SC1 Features www.onsemi.com Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 196 nC) V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (Coss = 296 pF) 900 V 28 mW @ 15 V 118 A 100% UIL Tested RoHS Compliant D Typica
9.8. Size:409K onsemi
nthl027n65s3hf.pdf
NTHL027N65S3HF Power MOSFET, N-Channel, SUPERFET) III, FRFET), 650 V, 75 A, 27.4 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(ON)
9.9. Size:399K onsemi
nthl040n65s3hf.pdf
NTHL040N65S3HF Power MOSFET, N-Channel, SUPERFET) III, FRFET), 650 V, 65 A, 40 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored to
9.11. Size:266K inchange semiconductor
nthl040n65s3f.pdf
isc N-Channel MOSFET Transistor NTHL040N65S3F FEATURES With TO-247 packaging Low R
Otros transistores... NTHL020N120SC1, NTHL027N65S3HF, NTHL033N65S3HF, NTHL040N120SC1, NTHL040N65S3HF, NTHL050N65S3HF, NTHL060N090SC1, NTHL080N120SC1, P55NF06, NTHL095N65S3HF, NTHL110N65S3F, NTHL160N120SC1, NTHL190N65S3HF, NTHLD040N65S3HF, NTHS5404T1, NTHS5441, NTLJS17D0P03P8Z
