NTHS5441 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTHS5441
   Código: A3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 9.7 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: CHIP

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NTHS5441 Datasheet (PDF)

..1. Size:117K onsemi
nths5441.pdf

NTHS5441MOSFET Power,P-Channel, ChipFET-20 V, -5.3 AFeatureshttp://onsemi.com Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive-20 V 46 mW @ -4.5 V -5.3 A Miniature ChipFET Surface Mount Package Pb-Free Package is AvailableSApplicationsG Power Management in Portable and Battery-Powered Pro

0.1. Size:66K onsemi
nths5441pt1g nths5441t1g nths5441t1-d.pdf

NTHS5441Power MOSFET-20 V, -5.3 A, P-Channel ChipFET]Features Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate DriveV(BR)DSS RDS(on) TYP ID MAX Miniature ChipFET Surface Mount Package-20 V 46 mW @ -4.5 V -5.3 A Pb-Free Package is AvailableSApplications Power Management in Portable and Battery-Powered Products; i

7.1. Size:200K onsemi
nths5445t1.pdf

NTHS5445T1Power MOSFETP-Channel ChipFETE5.2 Amps, 8 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space5.2 AMPS8 VOLTSApplications Power Management in Portable and Battery-Powered Products; i.e.,RDS(on) = 35 mWCellular and Cordless Telephones and PCMCIA CardsS

7.2. Size:68K onsemi
nths5443t1-d nths5443t1.pdf

NTHS5443Power MOSFET-20 V, -4.9 A, P-Channel ChipFETtFeatures Low RDS(on) for Higher Efficiency Logic Level Gate Drive http://onsemi.com Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is AvailableApplications -20 V 56 mW @ -4.5 -4.9 A Power Management in Portable and Battery-Powered Products; i.e.,Cellula

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