NTMD6P02R2 Todos los transistores

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P Channel SO 8, Dual Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO 8 Surface Mount Package 6 AMPERES Diode Exhibits High Speed, Soft Recovery 20 VOLTS Avalanche Energy Specified RDS(on) = 33 mW SO 8 Mountin

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P Channel SO 8, Dual Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO 8 Surface Mount Package 6 AMPERES Diode Exhibits High Speed, Soft Recovery 20 VOLTS Avalanche Energy Specified RDS(on) = 33 mW SO 8 Mountin

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P-Channel SOIC-8, Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life http //onsemi.com Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package 6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified P-Channel SOIC-8 Mounting Inform

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanch

NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) Max Dual SO-8 Surface Mount Package Saves Board Space ID Max This is a Pb-Free Device 215 mW @ 10 V 80 V 2.2 A 245 mW @ 4.5 V

NTMD6N03R2, NVMD6N03R2 Power MOSFET 30 V, 6A, Dual N--Channel SOIC--8 http //onsemi.com Features Designed for use in low voltage, high speed switching applications VDSS RDS(ON) Typ ID Max Ultra Low On--Resistance Provides Higher Efficiency and Extends Battery Life 30 V 24 m @VGS =10V 6.0 A -- RDS(on) = 0.024 , VGS = 10 V (Typ) -- RDS(on) = 0.030 , VGS = 4.5 V (Typ) N-