NTMD6P02R2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTMD6P02R2Preferred DevicePower MOSFET6 Amps, 20 VoltsPChannel SO8, DualFeatures Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO8 Surface Mount Package6 AMPERES Diode Exhibits High Speed, Soft Recovery20 VOLTS Avalanche Energy SpecifiedRDS(on) = 33 mW SO8 Mountin

NTMD6P02R2Preferred DevicePower MOSFET6 Amps, 20 VoltsPChannel SO8, DualFeatures Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO8 Surface Mount Package6 AMPERES Diode Exhibits High Speed, Soft Recovery20 VOLTS Avalanche Energy SpecifiedRDS(on) = 33 mW SO8 Mountin

NTMD6P02R2Preferred DevicePower MOSFET6 Amps, 20 VoltsP-Channel SOIC-8, DualFeatures Ultra Low RDS(on) Higher Efficiency Extending Battery Lifehttp://onsemi.com Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy SpecifiedP-Channel SOIC-8 Mounting Inform

NTMD6N03R2Power MOSFET30 V, 6 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery LifeVDSS RDS(ON) Typ ID Max- RDS(on) = 0.024 W, VGS = 10 V (Typ)30 V 24 mW @ VGS = 10 V 6.0 A- RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

NTMD6N02R2Power MOSFET6.0 Amps, 20 VoltsN-Channel Enhancement ModeDual SO-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX Ultra Low RDS(on)20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount PackageN-Channel Diode Exhibits High Speed, Soft RecoveryD Avalanch

NTMD6N04R2Power MOSFET40 V, 5.8 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applicationshttp://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ)VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ)40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

NTMD6601NR2GPower MOSFET80 V, 2.2 A, Dual N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) Max Dual SO-8 Surface Mount Package Saves Board Space ID Max This is a Pb-Free Device215 mW @ 10 V80 V 2.2 A245 mW @ 4.5 V

NTMD6N03R2,NVMD6N03R2Power MOSFET30 V, 6A, Dual N--Channel SOIC--8http://onsemi.comFeatures Designed for use in low voltage, high speed switching applicationsVDSS RDS(ON) Typ ID Max Ultra Low On--Resistance ProvidesHigher Efficiency and Extends Battery Life30 V 24 m @VGS =10V 6.0 A-- RDS(on) = 0.024 , VGS = 10 V (Typ)-- RDS(on) = 0.030 , VGS = 4.5 V (Typ)N-