NTMFD024N06C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMFD024N06C
   Código: 24DN6C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.7 nC
   trⓘ - Tiempo de subida: 1.3 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0226 Ohm
   Paquete / Cubierta: DFN8-5X6

Búsqueda de reemplazo de MOSFET NTMFD024N06C

NTMFD024N06C Datasheet (PDF)

..1. Size:134K onsemi
ntmfd024n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8-FL60 V, 22.6 mW, 24 ANTMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 22.6 mW @ 10 V 24 ATypical

7.1. Size:223K onsemi
ntmfd020n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANTMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 20.3 mW @ 10 V 27 ATypical

8.1. Size:163K onsemi
ntmfd016n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANTMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 16.3 mW @ 10 V 32 ATypical A

8.2. Size:225K onsemi
ntmfd030n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 29.7 mW, 19 ANTMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 29.7 mW @ 10 V 19 ATypical

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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