NTMFD6H840NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD6H840NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 74 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 249 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0069 Ohm

Encapsulados: DFN8-5X6

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NTMFD6H840NL datasheet

 ..1. Size:126K  onsemi
ntmfd6h840nl.pdf pdf_icon

NTMFD6H840NL

NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame

 0.1. Size:126K  1
ntmfd6h840nlt1g.pdf pdf_icon

NTMFD6H840NL

NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame

 5.1. Size:202K  1
ntmfd6h846nlt1g.pdf pdf_icon

NTMFD6H840NL

MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n

 5.2. Size:202K  onsemi
ntmfd6h846nl.pdf pdf_icon

NTMFD6H840NL

MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n

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