NTMFS1D15N03CG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:177K onsemi
ntmfs1d15n03cg.pdf pdf_icon

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 mW, 245 A NTMFS1D15N03CG Features Advanced Package (5x6 mm) with Excellent Thermal Conduction www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 30 V 1.15 mW @ 10 V 245 A Hot Swap Application Power Load

0.1. Size:177K 1
ntmfs1d15n03cgt1g.pdf pdf_icon

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 mW, 245 A NTMFS1D15N03CG Features Advanced Package (5x6 mm) with Excellent Thermal Conduction www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 30 V 1.15 mW @ 10 V 245 A Hot Swap Application Power Load

7.1. Size:176K 1
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MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.74 mW, 170 A NTMFS1D7N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6 mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 1.74 mW @ 1

9.1. Size:71K 1
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NTMFS5C442NL Power MOSFET 40 V, 2.5 mW, 130 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.5 mW @ 10 V 40

9.2. Size:91K 1
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NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60

9.3. Size:79K 1
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NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delive

9.4. Size:72K 1
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NTMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.2 mW @ 10 V 60

9.5. Size:122K 1
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NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V Par

9.6. Size:159K 1
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NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth

9.7. Size:175K 1
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MOSFET Power, Single, N-Channel 60 V, 1.6 mW, 230 A NTMFS5C612N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 1.6 mW @ 10 V 230 A MAXIMUM RATINGS (TJ = 25 C unless otherw

9.8. Size:169K 1
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NTMFS5C450N MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25 C unless other

9.9. Size:172K 1
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MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

9.10. Size:77K 1
ntmfs5c430nlt1g.pdf pdf_icon

NTMFS5C430NL Power MOSFET 40 V, 1.4 mW, 200 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.4 mW @ 10 V 40

9.11. Size:195K 1
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

9.12. Size:117K 1
ntmfs5c646nlt3g.pdf pdf_icon

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unles

9.13. Size:211K 1
ntmfs3d6n10mclt1g.pdf pdf_icon

MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 131 A NTMFS3D6N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET 3.6 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC 100 V 131 A 5.8 mW @ 4.5 V

9.14. Size:175K 1
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MOSFET Power, Single, N-Channel 40 V, 3.7 mW, 87 A NTMFS5C456NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.7 mW @ 10 V 40 V 87 A MAXIMUM RATINGS (TJ = 25 C unless other

9.15. Size:77K 1
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NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

9.16. Size:187K 1
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MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic

9.17. Size:121K 1
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NTMFS23D9N06HL Power MOSFET 60 V, 23.9 mW, 23 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen-Free / BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 23.9 mW @ 10 V 60 V

9.18. Size:175K 1
ntmfs6h848nlt1g.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 8.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80

9.19. Size:176K 1
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MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (

9.20. Size:121K 1
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NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V

9.21. Size:168K 1
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MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NTMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 10.7 mW @ 10 V 50 A MAXIMUM RATINGS (TJ = 25 C unless other

9.22. Size:172K 1
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MOSFET Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.23. Size:118K 1
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NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.0 mW @ 10 V 60

9.24. Size:76K 1
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NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unles

9.25. Size:79K 1
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NTMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.0 mW @ 10 V 40

9.26. Size:161K 1
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MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 378 A NTMFS5C404N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.7 mW @ 10 V 378 A MAXIMUM RATINGS (TJ = 25 C unless other

9.27. Size:79K 1
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NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.1 mW @ 10 V 60 V

9.28. Size:171K 1
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NTMFS6B05N MOSFET Power, Single, N-Channel 100 V, 8 mW, 104 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 100 V 8 mW @ 10 V 104 A Compliant MAXIMUM RATINGS (TJ

9.29. Size:171K 1
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NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.30. Size:73K 1
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NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

9.31. Size:206K 1
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

9.32. Size:185K 1
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MOSFET - Power, Single N-Channel 120 V, 6.0 mW, 93 A NTMFS006N12MC Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Soft Body Diode Reduces Voltage Ringing 6.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are

9.33. Size:176K 1
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MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

9.34. Size:171K 1
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NTMFS5C468NL MOSFET Power, Single, N-Channel 40 V, 10.3 mW, 37 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10.3 mW @ 10 V 40 V 37 A MAXIMUM RATINGS (TJ = 25 C unless ot

9.35. Size:202K 1
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MOSFET Power, Single, N-Channel 60 V, 1.2 mW, 287 A NTMFS5C604NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.2 mW @ 10 V 60 V 287 A 1.7 mW @ 4.5 V MAXIMUM RATINGS (TJ =

9.36. Size:76K 1
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NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un

9.37. Size:128K 1
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NTMFS5844NL, NVMFS5844NL MOSFET Power, Single, N-Channel 60 V, 61 A, 12 mW Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product 12 mW @ 10 V 60 V 61 A NVMFS Prefix for Automotive and

9.38. Size:162K 1
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NTMFS5C460NL Power MOSFET 40 V, 4.5 mW, 78 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.5 mW @ 10 V 40 V

9.39. Size:171K 1
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NTMFS6B14N MOSFET Power, Single, N-Channel 100 V, 15 mW, 50 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 100 V 15 mW @ 10 V 50 A Compliant MAXIMUM RATINGS (TJ

9.40. Size:200K 1
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

9.41. Size:138K 1
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NTMFS4C06N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V Compliant 30 V 69 A 6.0 mW @ 4.5 V A

9.42. Size:127K 1
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NTMFS5C673NL Power MOSFET 60 V, 9.2 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 9.2 mW @ 10 V 60 V

9.43. Size:177K 1
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MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NTMFS6H852NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 13.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

9.44. Size:98K 1
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NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V

9.45. Size:114K 1
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NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.0 mW @ 10 V 60

9.46. Size:79K 1
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NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU P

9.47. Size:203K 1
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NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

9.48. Size:213K 1
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9.49. Size:121K 1
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NTMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Va

9.50. Size:174K 1
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NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 mW, 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 200 A 2.2 mW @ 4.5 V MAXIMUM RATINGS (TJ =

9.51. Size:168K 1
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MOSFET Power, Single, N-Channel 40 V, 0.67 mW, 370 A NTMFS5C404NLT Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced 0.67 mW @ 10 V 40 V 370 A Optical Inspection 1.0 mW @ 4.

9.52. Size:228K 1
ntmfs5c670nt1g.pdf pdf_icon

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NTMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 7.0 mW @ 10 V 71 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

9.53. Size:173K 1
ntmfs6h836nlt1g.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.2 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise not

9.54. Size:108K onsemi
ntmfs4943nt1g.pdf pdf_icon

NTMFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 7.2 mW @ 10 V CPU Power Deli

9.55. Size:106K onsemi
ntmfs4847nat1g ntmfs4847nt1g.pdf pdf_icon

NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application Not

9.56. Size:116K onsemi
ntmfs4826ne.pdf pdf_icon

NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55

9.57. Size:107K onsemi
ntmfs4849nt1g.pdf pdf_icon

NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Note

9.58. Size:117K onsemi
ntmfs5c430n.pdf pdf_icon

NTMFS5C430N Power MOSFET 40 V, 1.7 mW, 185 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Va

9.59. Size:125K onsemi
ntmfs4707nt1g.pdf pdf_icon

NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features Fast Switching Times http //onsemi.com Low Gate Charge Low RDS(on) V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V 30 V 17 A 13.5 mW @ 4.5 V Applications Notebooks, Graphics Cards DC-DC Converters N-Channel Synchronou

9.60. Size:179K onsemi
ntmfs4c054n.pdf pdf_icon

NTMFS4C054N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 80 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.54 mW @ 10 V 30 V 80 A Compliant 3.56 mW @ 4.5 V

9.61. Size:87K onsemi
ntmfs4744n-d.pdf pdf_icon

NTMFS4744N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10 mW @ 10 V CPU Power Delivery 30 V 53 A 14 mW @ 4.5 V DC-DC Conver

9.62. Size:110K onsemi
ntmfs4927nct1g ntmfs4927nt1g.pdf pdf_icon

NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Com

9.63. Size:115K onsemi
ntmfs4825nfe.pdf pdf_icon

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V

9.64. Size:139K onsemi
ntmfs4839n.pdf pdf_icon

NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.

9.65. Size:79K onsemi
ntmfs4c55n.pdf pdf_icon

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delive

9.66. Size:112K onsemi
ntmfs4927-d.pdf pdf_icon

NTMFS4927N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9.0 m

9.67. Size:108K onsemi
ntmfs4926nt1g.pdf pdf_icon

NTMFS4926N Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 7.0 m

9.68. Size:98K onsemi
ntmfs6h801n.pdf pdf_icon

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V

9.69. Size:171K onsemi
ntmfs5h425nl.pdf pdf_icon

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.70. Size:107K onsemi
ntmfs4845nt1g.pdf pdf_icon

NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application No

9.71. Size:173K onsemi
ntmfs4c022n.pdf pdf_icon

MOSFET Power, Single, N-Channel, SO-8FL 30 V, 1.7 mW, 136 A NTMFS4C022N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.7 mW @ 10 V 30 V Compliant 136 A 2.4 mW

9.72. Size:137K onsemi
ntmfs016n06c.pdf pdf_icon

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 mW, 33 A NTMFS016N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 60 V 15.6 mW @ 10 V 33 A Applications

9.73. Size:106K onsemi
ntmfs4846nt1g.pdf pdf_icon

NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application Not

9.74. Size:177K onsemi
ntmfs4c029n.pdf pdf_icon

NTMFS4C029N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.88 mW @ 10 V Compliant 30 V 46 A 9.0 mW @ 4.5 V

9.75. Size:84K onsemi
ntmfs4c05n.pdf pdf_icon

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU P

9.76. Size:171K onsemi
ntmfs5h419nl.pdf pdf_icon

NTMFS5H419NL MOSFET Power, Single, N-Channel 40 V, 2.1 mW, 155 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.77. Size:113K onsemi
ntmfs5830nl.pdf pdf_icon

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 2.3 mW @

9.78. Size:146K onsemi
ntmfs4941n.pdf pdf_icon

NTMFS4941N Power MOSFET 30 V, 47 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.2 mW @ 10 V 30 V 47 A CPU

9.79. Size:121K onsemi
ntmfs5c406n.pdf pdf_icon

NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V

9.80. Size:90K onsemi
ntmfs4108n.pdf pdf_icon

NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http //onsemi.com Features Thermally and Electrically Enhanced Packaging Compatible with http //onsemi.com Standard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe After V(BR)DSS RDS(on) TYP ID MAX Board Mounting 1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low G

9.81. Size:104K onsemi
ntmfs5834nlt1g.pdf pdf_icon

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A Qualified and PPAP Capable 13.6 mW @ 4.5 V

9.82. Size:121K onsemi
ntmfs4939n-d.pdf pdf_icon

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP

9.83. Size:137K onsemi
ntmfs4845n.pdf pdf_icon

NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application N

9.84. Size:88K onsemi
ntmfs4c10n.pdf pdf_icon

NTMFS4C10N Power MOSFET 30 V, 46 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delive

9.85. Size:379K onsemi
ntmfsc0d9n04cl.pdf pdf_icon

MOSFET - Power, Single N-Channel, DUAL COOL), DFN8 5x6 40 V, 0.85 mW, 313 A NTMFSC0D9N04CL www.onsemi.com Features Advanced Dual-Sided Cooled Packaging VSSS RSS(ON) MAX ID MAX Ultra Low RDS(on) to Minimize Conduction Losses 0.85 mW @ 10 V MSL1 Robust Packaging Design 40 V 313 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.3 mW @ 4.5 V Compliant

9.86. Size:134K onsemi
ntmfs4837nt1g.pdf pdf_icon

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery 3

9.87. Size:73K onsemi
ntmfs5c612nl.pdf pdf_icon

NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

9.88. Size:171K onsemi
ntmfs4925n.pdf pdf_icon

NTMFS4925N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

9.89. Size:175K onsemi
ntmfs4c020n.pdf pdf_icon

MOSFET Power, Single, N-Channel, Logic Level, SO-8FL 30 V, 0.67 mW, 370 A NTMFS4C020N www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses 0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses 30 V 0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices

9.90. Size:181K onsemi
ntmfs5c682nl.pdf pdf_icon

NTMFS5C682NL MOSFET Power, Single, N-Channel 60 V, 21 mW, 25 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 21 mW @ 10 V 60 V 25 A Compliant 31.5 mW @ 4.5 V MA

9.91. Size:129K onsemi
ntmfs4744nt1g.pdf pdf_icon

NTMFS4744N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10 mW @ 10 V CPU Power Delivery 30 V 53 A 14 mW @ 4.5 V DC-DC Conver

9.92. Size:108K onsemi
ntmfs4925nt1g.pdf pdf_icon

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.6 m

9.93. Size:136K onsemi
ntmfs4835nt1g.pdf pdf_icon

NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU Po

9.94. Size:171K onsemi
ntmfs4927n ntmfs4927nc.pdf pdf_icon

NTMFS4927N, NTMFS4927NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 7.3 mW @ 10 V 30 V 38 A These Devices are Pb-Free, Haloge

9.95. Size:109K onsemi
ntmfs4839nht1g.pdf pdf_icon

NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 64 A

9.96. Size:176K onsemi
ntmfs5c468nl.pdf pdf_icon

NTMFS5C468NL MOSFET Power, Single, N-Channel 40 V, 10.3 mW, 37 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10.3 mW @ 10 V 40 V 37 A MAXIMUM RATINGS (TJ = 25 C unless ot

9.97. Size:112K onsemi
ntmfs4936nt1g.pdf pdf_icon

NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen

9.98. Size:93K onsemi
ntmfs4c09nt1g.pdf pdf_icon

NTMFS4C09N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.8 mW @ 10 V Applications 30 V 52 A 8.5 mW @

9.99. Size:109K onsemi
ntmfs4839nt1g.pdf pdf_icon

NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.5

9.100. Size:127K onsemi
ntmfs5113pl.pdf pdf_icon

NTMFS5113PL Power MOSFET -60 V, 14 mW, -64 A, Single P-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 14 mW @ -10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) -60 V -64 A 22 mW @ -4.5 V P

9.101. Size:115K onsemi
ntmfs4c03n.pdf pdf_icon

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.1 mW @ 10 V 30 V 136 A 2.8 mW @

9.102. Size:171K onsemi
ntmfs5h431nl.pdf pdf_icon

NTMFS5H431NL MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 106 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.3 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.103. Size:172K onsemi
ntmfs5c410n.pdf pdf_icon

MOSFET Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.104. Size:118K onsemi
ntmfs4933n.pdf pdf_icon

NTMFS4933N Power MOSFET 30 V, 210 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information 1.2

9.105. Size:112K onsemi
ntmfs5834nl nvmfs5834nl.pdf pdf_icon

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6

9.106. Size:136K onsemi
ntmfs4835n.pdf pdf_icon

NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU P

9.107. Size:121K onsemi
ntmfs5c442n.pdf pdf_icon

NTMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Va

9.108. Size:122K onsemi
ntmfs5c450nl.pdf pdf_icon

NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V Par

9.109. Size:127K onsemi
ntmfs4926n.pdf pdf_icon

NTMFS4926N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 44 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 7.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

9.110. Size:116K onsemi
ntmfs4c13n.pdf pdf_icon

NTMFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.1 mW @ 10 V CPU Power Del

9.111. Size:105K onsemi
ntmfs4899nf.pdf pdf_icon

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V

9.112. Size:169K onsemi
ntmfs5c450n.pdf pdf_icon

NTMFS5C450N MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25 C unless other

9.113. Size:91K onsemi
ntmfs4c08n.pdf pdf_icon

NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery 5.8 mW @ 10

9.114. Size:121K onsemi
ntmfs4934n.pdf pdf_icon

NTMFS4934N Power MOSFET 30 V, 147 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 2.0 mW @ 10 V Applications 30 V 147 A 3.0

9.115. Size:117K onsemi
ntmfs4c35n.pdf pdf_icon

NTMFS4C35N Power MOSFET 30 V, 80 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.2 mW @ 10 V Applications 30 V 80 A 4.0 mW

9.116. Size:139K onsemi
ntmfs4925ne.pdf pdf_icon

NTMFS4925NE Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

9.117. Size:107K onsemi
ntmfs4852nt1g.pdf pdf_icon

NTMFS4852N Power MOSFET 30 V, 155 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.1 mW @ 10 V Refer to Application Note AND8195/D 30 V 155 A CPU Po

9.118. Size:85K onsemi
ntmfs4701n.pdf pdf_icon

NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 http //onsemi.com New Package Provides Capability of Inspection and Probe After Board Mounting V(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG 6.0 mW @ 10 V O

9.119. Size:72K onsemi
ntmfs5c442nl.pdf pdf_icon

NTMFS5C442NL Power MOSFET 40 V, 2.8 mW, 121 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V

9.120. Size:116K onsemi
ntmfs4982nf.pdf pdf_icon

NTMFS4982NF Power MOSFET 30 V, 207 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 1.3 mW @ 10 V Serv

9.121. Size:139K onsemi
ntmfs4c025n.pdf pdf_icon

NTMFS4C025N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V 30 V 69 A Compliant 4.88 mW @ 4.5 V

9.122. Size:92K onsemi
ntmfs4708n ntmfs4708nt1g.pdf pdf_icon

NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features Fast Switching Times Low Gate Charge http //onsemi.com Low RDS(on) Low Inductance SOIC-8 Package V(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices Applications 7.3 mW @ 10 V 30 V 19 A Notebooks, Graphics Cards 10.1 mW @ 4.5 V DC-DC Converters Synchronous Rectification N

9.123. Size:110K onsemi
ntmfs4854nst1g.pdf pdf_icon

NTMFS4854NS SENSEFET Power MOSFET 25 V, 149 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.5

9.124. Size:84K onsemi
ntmfs4h01nf.pdf pdf_icon

NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) T

9.125. Size:171K onsemi
ntmfs4939n.pdf pdf_icon

NTMFS4939N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 53 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V Compliant 30 V 53 A 8.0 mW @ 4.5 V

9.126. Size:112K onsemi
ntmfs5c604nl.pdf pdf_icon

NTMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.2 mW @ 10 V 60

9.127. Size:107K onsemi
ntmfs5844nl.pdf pdf_icon

NTMFS5844NL Power MOSFET 60 V, 60 A, 12 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 12 mW @ 10 V 60 V 60 A Parameter Symbol Value Unit 16 mW @ 4.5 V Drain-to-Source Voltage VDS

9.128. Size:228K onsemi
ntmfs5c646n.pdf pdf_icon

MOSFET Power, Single, N-Channel 60 V, 5.0 mW, 93 A NTMFS5C646N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 5.0 mW @ 10 V 93 A Compliant MAXIMUM RATINGS (T

9.129. Size:213K onsemi
ntmfs015n10mcl.pdf pdf_icon

9.130. Size:174K onsemi
ntmfs5h400nl.pdf pdf_icon

NTMFS5H400NL MOSFET Power, Single, N-Channel 40 V, 0.80 mW, 330 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.80 mW @ 10 V 40 V 330 A MAXIMUM RATINGS (TJ = 25 C unless

9.131. Size:136K onsemi
ntmfs4837nht1g.pdf pdf_icon

NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application

9.132. Size:86K onsemi
ntmfs4h02nf.pdf pdf_icon

NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances www.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on)

9.133. Size:173K onsemi
ntmfs6h836nl.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.2 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise not

9.134. Size:108K onsemi
ntmfs4933nt1g.pdf pdf_icon

NTMFS4933N Power MOSFET 30 V, 210 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information 1.2

9.135. Size:211K onsemi
ntmfs3d6n10mcl.pdf pdf_icon

MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 131 A NTMFS3D6N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET 3.6 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC 100 V 131 A 5.8 mW @ 4.5 V

9.136. Size:140K onsemi
ntmfs4c09n.pdf pdf_icon

NTMFS4C09N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.8 mW @ 10 V 30 V 52 A Compliant 8.5 mW @ 4.5 V A

9.137. Size:178K onsemi
ntmfs020n06c.pdf pdf_icon

MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 60 V 19.6 mW @ 10 V 28 A Applications

9.138. Size:104K onsemi
ntmfs4897nft1g.pdf pdf_icon

NTMFS4897NF Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 30 V 171 A Applications 3.0 mW @ 4.5 V C

9.139. Size:137K onsemi
ntmfs4852n.pdf pdf_icon

NTMFS4852N Power MOSFET 30 V, 155 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 2.1 mW @ 10 V Refer to Application Note AND8195/D 30 V 155 A CPU Po

9.140. Size:174K onsemi
ntmfs5c430nl.pdf pdf_icon

NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 mW, 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 200 A 2.2 mW @ 4.5 V MAXIMUM RATINGS (TJ =

9.141. Size:228K onsemi
ntmfs5c670n.pdf pdf_icon

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NTMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 7.0 mW @ 10 V 71 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

9.142. Size:135K onsemi
ntmfs4836n.pdf pdf_icon

NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5

9.143. Size:187K onsemi
ntmfs0d8n02p1e.pdf pdf_icon

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic

9.144. Size:207K onsemi
ntmfs5h600nl.pdf pdf_icon

MOSFET Power, Single, N-Channel 60 V, 1.3 mW, 250 A NTMFS5H600NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.3 mW @ 10 V 60 V 250 A MAXIMUM RATINGS (TJ = 25 C unless ot

9.145. Size:139K onsemi
ntmfs4839nh.pdf pdf_icon

NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 64 A

9.146. Size:89K onsemi
ntmfs4120n.pdf pdf_icon

NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ These are Pb-Free Devices (Note 1) Applications 3.5 mW @ 10 V 30 V 31 A Notebooks, Graphics Cards 4.2 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXI

9.147. Size:178K onsemi
ntmfs6h836n.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 6.7 mW, 80 A NTMFS6H836N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 80 V 6.7 mW @ 10 V 80 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.148. Size:182K onsemi
ntmfs4c250n.pdf pdf_icon

NTMFS4C250N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 69 A Compliant 6.0 mW @ 4.5 V A

9.149. Size:177K onsemi
ntmfs6h818n.pdf pdf_icon

NTMFS6H818N MOSFET Power, Single, N-Channel 80 V, 3.7 mW, 123 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 3.7 mW @ 10 V 123 A MAXIMUM RATINGS (TJ = 25 C unless other

9.150. Size:137K onsemi
ntmfs4821nt1g.pdf pdf_icon

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application

9.151. Size:126K onsemi
ntmfs4122nt1g.pdf pdf_icon

NTMFS4122N Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Low Inductance SO-8 Package These are Pb-Free Devices ID MAX V(BR)DSS RDS(on) TYP (Note 1) Applications 4.6 mW @ 10 V Notebooks, Graphics Cards 30 V 23 A 6.3 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXIMUM RATINGS (TJ = 25 C unl

9.152. Size:74K onsemi
ntmfs5834nl.pdf pdf_icon

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6

9.153. Size:107K onsemi
ntmfs5832nlt1g.pdf pdf_icon

NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 4.2 mW @

9.154. Size:104K onsemi
ntmfs4825nfet1g.pdf pdf_icon

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V

9.155. Size:177K onsemi
ntmfs6h864nl.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NTMFS6H864NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 29 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80

9.156. Size:880K onsemi
ntmfs4833na.pdf pdf_icon

9.157. Size:139K onsemi
ntmfs4833nt1g.pdf pdf_icon

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 2.0 mW @ 10 V 30 V 191 A CPU Po

9.158. Size:139K onsemi
ntmfs4833ns.pdf pdf_icon

NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m

9.159. Size:153K onsemi
ntmfs4108nt1g.pdf pdf_icon

NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http //onsemi.com Features Thermally and Electrically Enhanced Packaging Compatible with http //onsemi.com Standard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe After V(BR)DSS RDS(on) TYP ID MAX Board Mounting 1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low G

9.160. Size:169K onsemi
ntmfs0d55n03cg.pdf pdf_icon

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 V 0.58 mW @ 1

9.161. Size:127K onsemi
ntmfs5c673nl.pdf pdf_icon

NTMFS5C673NL Power MOSFET 60 V, 9.2 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 9.2 mW @ 10 V 60 V

9.162. Size:171K onsemi
ntmfs4c032n.pdf pdf_icon

NTMFS4C032N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.35 mW @ 10 V Compliant 30 V 38 A Applications 1

9.163. Size:178K onsemi
ntmfs4c027n.pdf pdf_icon

NTMFS4C027N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.8 mW @ 10 V 30 V 52 A Applications 7.4

9.164. Size:136K onsemi
ntmfs4847n.pdf pdf_icon

NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application No

9.165. Size:120K onsemi
ntmfs4854ns.pdf pdf_icon

NTMFS4854NS SENSEFET Power MOSFET 25 V, 149 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.5

9.166. Size:168K onsemi
ntmfs5c673n.pdf pdf_icon

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NTMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 10.7 mW @ 10 V 50 A MAXIMUM RATINGS (TJ = 25 C unless other

9.167. Size:162K onsemi
ntmfs5c460nl.pdf pdf_icon

NTMFS5C460NL Power MOSFET 40 V, 4.5 mW, 78 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.5 mW @ 10 V 40 V

9.168. Size:138K onsemi
ntmfs4841nh.pdf pdf_icon

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

9.169. Size:129K onsemi
ntmfs4955n.pdf pdf_icon

NTMFS4955N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

9.170. Size:89K onsemi
ntmfs4833n.pdf pdf_icon

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V 30 V 191 A

9.171. Size:194K onsemi
ntmfs6h800nl.pdf pdf_icon

NTMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol V

9.172. Size:128K onsemi
ntmfs5844nl nvmfs5844nl.pdf pdf_icon

NTMFS5844NL, NVMFS5844NL MOSFET Power, Single, N-Channel 60 V, 61 A, 12 mW Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product 12 mW @ 10 V 60 V 61 A NVMFS Prefix for Automotive and

9.173. Size:119K onsemi
ntmfs4923ne.pdf pdf_icon

NTMFS4923NE Power MOSFET 30 V, 91 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3.3 mW @ 10 V 91 A

9.174. Size:116K onsemi
ntmfs5c404nlt.pdf pdf_icon

NTMFS5C404NLT Power MOSFET 40 V, 0.75 mW, 352 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co

9.175. Size:179K onsemi
ntmfs6h800n.pdf pdf_icon

NTMFS6H800N MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 2.1 mW @ 10 V 203 A MAXIMUM RATINGS (TJ = 25 C unless other

9.176. Size:116K onsemi
ntmfs5832nl.pdf pdf_icon

NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 4.2 mW @

9.177. Size:169K onsemi
ntmfs5c677nl.pdf pdf_icon

NTMFS5C677NL Power MOSFET 60 V, 15.0 mW, 36 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol V

9.178. Size:174K onsemi
ntmfs6h801nl.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 2.7 mW, 160 A NTMFS6H801NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

9.179. Size:135K onsemi
ntmfs4834n.pdf pdf_icon

NTMFS4834N Power MOSFET 30 V, 130 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 130 A 4.0 mW @

9.180. Size:108K onsemi
ntmfs4926ne.pdf pdf_icon

NTMFS4926NE Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

9.181. Size:105K onsemi
ntmfs4898nft1g.pdf pdf_icon

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V

9.182. Size:175K onsemi
ntmfs6h848nl.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 8.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80

9.183. Size:145K onsemi
ntmfs4841n.pdf pdf_icon

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4

9.184. Size:174K onsemi
ntmfs5h610nl.pdf pdf_icon

NTMFS5H610NL MOSFET Power, Single, N-Channel 60 V, 10 mW, 44 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @ 10 V 60 V 44 A MAXIMUM RATINGS (TJ = 25 C unless otherw

9.185. Size:110K onsemi
ntmfs4922ne.pdf pdf_icon

NTMFS4922NE Power MOSFET 30 V, 147 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.0 mW @

9.186. Size:82K onsemi
ntmfs4119n.pdf pdf_icon

NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Fast Switching Times Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 2.3 mW @ 10 V Applications 30 V 30 A 3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC D MAXIMUM RATINGS (TJ = 25 C

9.187. Size:91K onsemi
ntmfs5c628nl.pdf pdf_icon

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60

9.188. Size:109K onsemi
ntmfs4937nt1g.pdf pdf_icon

NTMFS4937N Power MOSFET 30 V, 70 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V CPU Power Del

9.189. Size:93K onsemi
ntmfs4c06n.pdf pdf_icon

NTMFS4C06N Power MOSFET 30 V, 69 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V Applications 30 V 69 A CPU P

9.190. Size:108K onsemi
ntmfs4841nht1g.pdf pdf_icon

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

9.191. Size:72K onsemi
ntmfs6b14n.pdf pdf_icon

NTMFS6B14N Power MOSFET 100 V, 15 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

9.192. Size:114K onsemi
ntmfs5c670nl.pdf pdf_icon

NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.1 mW @ 10 V 60 V

9.193. Size:172K onsemi
ntmfs5c426n.pdf pdf_icon

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

9.194. Size:109K onsemi
ntmfs4939nt1g.pdf pdf_icon

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP

9.195. Size:175K onsemi
ntmfs5c456nl.pdf pdf_icon

MOSFET Power, Single, N-Channel 40 V, 3.7 mW, 87 A NTMFS5C456NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.7 mW @ 10 V 40 V 87 A MAXIMUM RATINGS (TJ = 25 C unless other

9.196. Size:113K onsemi
ntmfs4936n-d.pdf pdf_icon

NTMFS4936N Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON

9.197. Size:135K onsemi
ntmfs4823n.pdf pdf_icon

NTMFS4823N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 10.5 mW @ 10 V 30 V 30 A CPU Pow

9.198. Size:136K onsemi
ntmfs4836nt1g.pdf pdf_icon

NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5

9.199. Size:71K onsemi
ntmfs5c410nl.pdf pdf_icon

NTMFS5C410NL Power MOSFET 40 V, 0.9 mW, 302 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 0.9 mW @ 10 V

9.200. Size:72K onsemi
ntmfs6b03n.pdf pdf_icon

NTMFS6B03N Power MOSFET 100 V, 4.8 mW, 132 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise not

9.201. Size:114K onsemi
ntmfs5c645nl.pdf pdf_icon

NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.0 mW @ 10 V 60

9.202. Size:134K onsemi
ntmfs4837n-d.pdf pdf_icon

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery

9.203. Size:72K onsemi
ntmfs6b05n.pdf pdf_icon

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

9.204. Size:137K onsemi
ntmfs4837nh.pdf pdf_icon

NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices* 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application

9.205. Size:139K onsemi
ntmfs4833nst1g.pdf pdf_icon

NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m

9.206. Size:120K onsemi
ntmfs5c423nl.pdf pdf_icon

NTMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.0 mW @ 10 V Par

9.207. Size:1406K onsemi
ntmfs08n003c.pdf pdf_icon

www.onsemi.com NTMFS08N003C N-Channel Shielded Gate PowerTrench MOSFET 80 V, 147 A, 3.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that Max rDS(on) = 3.1 m at VGS = 10 V, ID = 56 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 8.1 m

9.208. Size:113K onsemi
ntmfs4c01n.pdf pdf_icon

NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 0.9 mW @ 10 V 30 V 303 A 1.2 mW @

9.209. Size:173K onsemi
ntmfs4936n ntmfs4936nc.pdf pdf_icon

NTMFS4936N, NTMFS4936NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 79 A Features http //onsemi.com Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Next Generation Enhanced Body Diode, Engineered for Soft 3.8 mW @ 10 V Recovery, Provides Schottky-Like Performance 30 V 79 A The

9.210. Size:89K onsemi
ntmfs4121n.pdf pdf_icon

NTMFS4121N Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ These are Pb-Free Devices (Note 1) Applications 4.0 mW @ 10 V 30 V 29 A Notebooks, Graphics Cards 5.5 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXI

9.211. Size:84K onsemi
ntmfs4122n.pdf pdf_icon

NTMFS4122N Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Low Inductance SO-8 Package This is a Pb-Free Device ID MAX Applications V(BR)DSS RDS(on) TYP (Note 1) Notebooks, Graphics Cards 4.6 mW @ 10 V DC-DC Converters 30 V 23 A 6.3 mW @ 4.5 V Synchronous Rectification MAXIMUM RATINGS (TJ = 25 C unless o

9.212. Size:182K onsemi
ntmfs4c028n.pdf pdf_icon

NTMFS4C028N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.73 mW @ 10 V 30 V 52 A Compliant 7.0 mW @ 4.5 V

9.213. Size:138K onsemi
ntmfs4897nf.pdf pdf_icon

NTMFS4897NF Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 2.0 mW @ 10 V CPU Power Delivery 30 V 171

9.214. Size:113K onsemi
ntmfs5c646nl.pdf pdf_icon

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.7 mW @ 10 V 60 V

9.215. Size:115K onsemi
ntmfs4935n.pdf pdf_icon

NTMFS4935N Power MOSFET 30 V, 93 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.2 mW @ 10 V CPU Power Deli

9.216. Size:107K onsemi
ntmfs4851nt1g.pdf pdf_icon

NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.9 mW @ 10 V Refer to Application Note

9.217. Size:124K onsemi
ntmfs4119nt1g.pdf pdf_icon

NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Fast Switching Times Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 2.3 mW @ 10 V Applications 30 V 30 A 3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC D MAXIMUM RATINGS (TJ = 25 C

9.218. Size:132K onsemi
ntmfs4121nt1g.pdf pdf_icon

NTMFS4121N Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 4.0 mW @ 10 V Applications 30 V 29 A 5.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters D Synchronous Rectification MAXI

9.219. Size:110K onsemi
ntmfs4983nf.pdf pdf_icon

NTMFS4983NF Power MOSFET 30 V, 106 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V Applications 30 V 10

9.220. Size:171K onsemi
ntmfs5h630nl.pdf pdf_icon

MOSFET Power, Single, N-Channel 60 V, 3.1 mW, 120 A NTMFS5H630NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

9.221. Size:105K onsemi
ntmfs4921nt1g.pdf pdf_icon

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 3

9.222. Size:137K onsemi
ntmfs4851n.pdf pdf_icon

NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.9 mW @ 10 V Refer to Application Not

9.223. Size:76K onsemi
ntmfs5c609nl.pdf pdf_icon

NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un

9.224. Size:110K onsemi
ntmfs4934nt1g.pdf pdf_icon

NTMFS4934N Power MOSFET 30 V, 147 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 2.0 mW @ 10 V Applications 30 V 147 A 3.0

9.225. Size:110K onsemi
ntmfs4985nf.pdf pdf_icon

NTMFS4985NF Power MOSFET 30 V, 65 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.4 mW @ 10 V Applications 30 V 65

9.226. Size:173K onsemi
ntmfs4c024n.pdf pdf_icon

NTMFS4C024N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 78 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.8 mW @ 10 V 30 V 78 A Compliant 4.0 mW @ 4.5 V

9.227. Size:76K onsemi
ntmfs4931n.pdf pdf_icon

NTMFS4931N Power MOSFET 30 V, 246 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control 1.1 mW @ 10 V Refer to Application Note AND8195/D for Mounting I

9.228. Size:193K onsemi
ntmfs6d1n08h.pdf pdf_icon

NTMFS6D1N08H MOSFET Power, Single, N-Channel 80 V, 5.5 mW, 89 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant 5.5 mW @ 10 V 80 V 89 A

9.229. Size:103K onsemi
ntmfs5830nlt1g.pdf pdf_icon

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 2.3 mW @

9.230. Size:182K onsemi
ntmfs5h409nl.pdf pdf_icon

NTMFS5H409NL MOSFET Power, Single, N-Channel 40 V, 1.1 mW, 270 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.1 mW @ 10 V 40 V 270 A MAXIMUM RATINGS (TJ = 25 C unless ot

9.231. Size:108K onsemi
ntmfs4941nt1g.pdf pdf_icon

NTMFS4941N Power MOSFET 30 V, 47 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.2 mW @ 10 V 30 V 47 A CP

9.232. Size:81K onsemi
ntmfs4h01n.pdf pdf_icon

NTMFS4H01N Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications

9.233. Size:176K onsemi
ntmfs6h818nl.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

9.234. Size:74K onsemi
ntmfs5c404nl.pdf pdf_icon

NTMFS5C404NL Power MOSFET 40 V, 0.75 mW, 339 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 0.75 mW @ 10 V

9.235. Size:135K onsemi
ntmfs4823nt1g.pdf pdf_icon

NTMFS4823N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 10.5 mW @ 10 V 30 V 30 A CPU Pow

9.236. Size:138K onsemi
ntmfs024n06c.pdf pdf_icon

9.237. Size:117K onsemi
ntmfs4921n.pdf pdf_icon

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 3

9.238. Size:105K onsemi
ntmfs4946n.pdf pdf_icon

NTMFS4946N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delivery 30 V

9.239. Size:177K onsemi
ntmfs6h852nl.pdf pdf_icon

MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NTMFS6H852NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 13.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

9.240. Size:115K onsemi
ntmfs4841nt1g.pdf pdf_icon

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.

9.241. Size:109K onsemi
ntmfs4935nbt1g ntmfs4935nct1g ntmfs4935nt1g.pdf pdf_icon

NTMFS4935N Power MOSFET 30 V, 93 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.2 mW @ 10 V CPU Power Del

9.242. Size:168K onsemi
ntmfs5c404n.pdf pdf_icon

NTMFS5C404N MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 378 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.7 mW @ 10 V 378 A MAXIMUM RATINGS (TJ = 25 C unless other

9.243. Size:139K onsemi
ntmfs4898nf.pdf pdf_icon

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V

9.244. Size:138K onsemi
ntmfs4943n.pdf pdf_icon

NTMFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 7.2 mW @ 10 V CPU Power Deli

9.245. Size:137K onsemi
ntmfs4849n.pdf pdf_icon

NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Not

9.246. Size:106K onsemi
ntmfs5844nlt1g nvmfs5844nl.pdf pdf_icon

NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements;

9.247. Size:159K onsemi
ntmfs5c406nl.pdf pdf_icon

NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth

9.248. Size:176K onsemi
ntmfs0d9n03cg.pdf pdf_icon

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (

9.249. Size:136K onsemi
ntmfs4821n.pdf pdf_icon

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application

9.250. Size:133K onsemi
ntmfs4c302n.pdf pdf_icon

NTMFS4C302N MOSFET Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 mW, 230 A www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V(BR)DSS RDS(on) MAX ID MAX Low RDS(on) to Minimize Conduction Losses 1.15 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses 30 V 230 A 1.7 mW @ 4.5 V These Devices are Pb-Free, Halogen Free/BFR Free and a

9.251. Size:203K onsemi
ntmfs5c628n.pdf pdf_icon

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

9.252. Size:121K onsemi
ntmfs23d9n06hl.pdf pdf_icon

NTMFS23D9N06HL Power MOSFET 60 V, 23.9 mW, 23 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen-Free / BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 23.9 mW @ 10 V 60 V

9.253. Size:173K onsemi
ntmfs5h615nl.pdf pdf_icon

NTMFS5H615NL MOSFET Power, Single, N-Channel 60 V, 1.8 mW, 185 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.8 mW @ 10 V 60 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.254. Size:115K onsemi
ntmfs5c442nlt.pdf pdf_icon

NTMFS5C442NLT Power MOSFET 40 V, 2.8 mW, 127 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com NTMFS5C442NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

9.255. Size:112K onsemi
ntmfs4926n-d.pdf pdf_icon

NTMFS4926N Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 7.0 m

9.256. Size:143K onsemi
ntmfs4937n.pdf pdf_icon

NTMFS4937N Power MOSFET 30 V, 70 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 4.5 mW @ 10 V CPU Power Del

9.257. Size:175K onsemi
ntmfs5h414nl.pdf pdf_icon

NTMFS5H414NL MOSFET Single, N-Channel 40 V, 1.4 mW, 210 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 210 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

9.258. Size:84K onsemi
ntmfs4h02n.pdf pdf_icon

NTMFS4H02N Power MOSFET 25 V, 193 A, Single N-Channel, SO-8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances http //onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications 4.5

9.259. Size:134K onsemi
ntmfs4834nt1g.pdf pdf_icon

NTMFS4834N Power MOSFET 30 V, 130 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 130 A 4.0 mW @ 4

9.260. Size:112K onsemi
ntmfs4925n-d.pdf pdf_icon

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 6.0 m

9.261. Size:137K onsemi
ntmfs4846n.pdf pdf_icon

NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application No

9.262. Size:113K onsemi
ntmfs5c410nlt.pdf pdf_icon

NTMFS5C410NLT Power MOSFET 40 V, 0.9 mW, 315 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

9.263. Size:127K onsemi
ntmfs4701nt1g.pdf pdf_icon

NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with http //onsemi.com Standard SOIC-8 New Package Provides Capability of Inspection and Probe After Board Mounting V(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG 6.0 mW @ 10 V 30 V

9.264. Size:136K onsemi
ntmfs4120nt1g.pdf pdf_icon

NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ These are Pb-Free Devices (Note 1) Applications 3.5 mW @ 10 V 30 V 31 A Notebooks, Graphics Cards 4.2 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXI

9.265. Size:124K onsemi
ntmfs4c59n.pdf pdf_icon

NTMFS4C59N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.8 mW @ 10 V CPU Power Delivery 30 V 52 A 8.5 mW

9.266. Size:177K onsemi
ntmfs4c290n.pdf pdf_icon

NTMFS4C290N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 6.95 mW @ 10 V Compliant 30 V 46 A 10.8 mW @ 4.5 V

9.267. Size:85K onsemi
ntmfs4707n.pdf pdf_icon

NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features Fast Switching Times http //onsemi.com Low Gate Charge Low RDS(on) Low Inductance SOIC-8 Package V(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices 10 mW @ 10 V 30 V 17 A Applications 13.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters Synchronous Rectific

9.268. Size:89K onsemi
ntmfs4h013nf.pdf pdf_icon

NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VGS MAX RDS(on) TYP QGTOT

9.269. Size:108K onsemi
ntmfs4923net1g.pdf pdf_icon

NTMFS4923NE Power MOSFET 30 V, 91 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3.3 mW @ 10 V 91 A

9.270. Size:109K onsemi
ntmfs4899nft1g.pdf pdf_icon

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V

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