NTMFS4899NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4899NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.3 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: SO-8FL
- Selección de transistores por parámetros
NTMFS4899NF Datasheet (PDF)
ntmfs4899nf.pdf

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4899nft1g.pdf

NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4897nft1g.pdf

NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V30 V171 AApplications3.0 mW @ 4.5 V C
ntmfs4898nft1g.pdf

NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCE82H140LL | IRFZ24NLPBF | FDMA1027P | SI3879DV | CSD17578Q3A | QH8MA4 | CM12N65F
History: NCE82H140LL | IRFZ24NLPBF | FDMA1027P | SI3879DV | CSD17578Q3A | QH8MA4 | CM12N65F



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
transistor 2222a | 8050 transistor | bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor