NTMFS4899NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4899NF
Código: 4899NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 48 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 12.2 nC
Tiempo de subida (tr): 20.3 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de MOSFET NTMFS4899NF
NTMFS4899NF Datasheet (PDF)
ntmfs4899nf.pdf
NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4899nft1g.pdf
NTMFS4899NFPower MOSFET30 V, 75 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.0 mW @ 10 V
ntmfs4897nft1g.pdf
NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V30 V171 AApplications3.0 mW @ 4.5 V C
ntmfs4898nft1g.pdf
NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V
ntmfs4897nf.pdf
NTMFS4897NFPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.0 mW @ 10 V CPU Power Delivery30 V171
ntmfs4898nf.pdf
NTMFS4898NFPower MOSFET30 V, 117 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.0 mW @ 10 V
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