NTMFS4927NC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4927NC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25.5 nS

Cossⓘ - Capacitancia de salida: 366 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm

Encapsulados: SO-8FL

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NTMFS4927NC datasheet

 ..1. Size:171K  onsemi
ntmfs4927n ntmfs4927nc.pdf pdf_icon

NTMFS4927NC

NTMFS4927N, NTMFS4927NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 7.3 mW @ 10 V 30 V 38 A These Devices are Pb-Free, Haloge

 0.1. Size:110K  onsemi
ntmfs4927nct1g ntmfs4927nt1g.pdf pdf_icon

NTMFS4927NC

NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Com

 5.1. Size:112K  onsemi
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NTMFS4927NC

NTMFS4927N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9.0 m

 6.1. Size:108K  onsemi
ntmfs4926nt1g.pdf pdf_icon

NTMFS4927NC

NTMFS4926N Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 7.0 m

Otros transistores... NTMFS1D15N03CG, NTMFS23D9N06HL, NTMFS3D6N10MCL, NTMFS4833NA, NTMFS4837NH, NTMFS4845N, NTMFS4897NF, NTMFS4899NF, IRF520, NTMFS4936NC, NTMFS4C020N, NTMFS4C022N, NTMFS4C024N, NTMFS4C025N, NTMFS4C027N, NTMFS4C028N, NTMFS4C029N