NTMFS4C032N Todos los transistores

 ..1. Size:171K  onsemi
 ntmfs4c032n.pdf

NTMFS4C032N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.35 mW @ 10 V Compliant 30 V 38 A Applications 1

 5.1. Size:115K  onsemi
 ntmfs4c03n.pdf

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.1 mW @ 10 V 30 V 136 A 2.8 mW @

 6.1. Size:138K  1
 ntmfs4c06n.pdf

NTMFS4C06N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V Compliant 30 V 69 A 6.0 mW @ 4.5 V A

 6.2. Size:79K  1
 ntmfs4c05nt1g.pdf

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU P

 6.3. Size:179K  onsemi
 ntmfs4c054n.pdf

NTMFS4C054N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 80 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.54 mW @ 10 V 30 V 80 A Compliant 3.56 mW @ 4.5 V

 6.4. Size:173K  onsemi
 ntmfs4c022n.pdf

MOSFET Power, Single, N-Channel, SO-8FL 30 V, 1.7 mW, 136 A NTMFS4C022N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.7 mW @ 10 V 30 V Compliant 136 A 2.4 mW

 6.5. Size:177K  onsemi
 ntmfs4c029n.pdf

NTMFS4C029N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.88 mW @ 10 V Compliant 30 V 46 A 9.0 mW @ 4.5 V

 6.6. Size:84K  onsemi
 ntmfs4c05n.pdf

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU P

 6.7. Size:175K  onsemi
 ntmfs4c020n.pdf

MOSFET Power, Single, N-Channel, Logic Level, SO-8FL 30 V, 0.67 mW, 370 A NTMFS4C020N www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses 0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses 30 V 0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices

 6.8. Size:93K  onsemi
 ntmfs4c09nt1g.pdf

NTMFS4C09N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.8 mW @ 10 V Applications 30 V 52 A 8.5 mW @

 6.9. Size:91K  onsemi
 ntmfs4c08n.pdf

NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery 5.8 mW @ 10

 6.10. Size:139K  onsemi
 ntmfs4c025n.pdf

NTMFS4C025N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V 30 V 69 A Compliant 4.88 mW @ 4.5 V

 6.11. Size:140K  onsemi
 ntmfs4c09n.pdf

NTMFS4C09N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.8 mW @ 10 V 30 V 52 A Compliant 8.5 mW @ 4.5 V A

 6.12. Size:178K  onsemi
 ntmfs4c027n.pdf

NTMFS4C027N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.8 mW @ 10 V 30 V 52 A Applications 7.4

 6.13. Size:93K  onsemi
 ntmfs4c06n.pdf

NTMFS4C06N Power MOSFET 30 V, 69 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V Applications 30 V 69 A CPU P

 6.14. Size:113K  onsemi
 ntmfs4c01n.pdf

NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 0.9 mW @ 10 V 30 V 303 A 1.2 mW @

 6.15. Size:182K  onsemi
 ntmfs4c028n.pdf

NTMFS4C028N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.73 mW @ 10 V 30 V 52 A Compliant 7.0 mW @ 4.5 V

 6.16. Size:173K  onsemi
 ntmfs4c024n.pdf

NTMFS4C024N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 78 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.8 mW @ 10 V 30 V 78 A Compliant 4.0 mW @ 4.5 V