NTMFS5C406NL Todos los transistores

 

NTMFS5C406NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C406NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 179 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 362 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 4600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0007 Ohm
   Paquete / Cubierta: DFN5
 

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NTMFS5C406NL Datasheet (PDF)

 ..1. Size:159K  onsemi
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NTMFS5C406NL

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

 0.1. Size:159K  1
ntmfs5c406nlt1g.pdf pdf_icon

NTMFS5C406NL

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

 3.1. Size:121K  1
ntmfs5c406nt1g.pdf pdf_icon

NTMFS5C406NL

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

 3.2. Size:121K  onsemi
ntmfs5c406n.pdf pdf_icon

NTMFS5C406NL

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

Otros transistores... NTMFS4C250N , NTMFS4C290N , NTMFS4C302N , NTMFS4C59N , NTMFS4H013NF , NTMFS5113PL , NTMFS5C404N , NTMFS5C406N , EMB04N03H , NTMFS5C410N , NTMFS5C426N , NTMFS5C430N , NTMFS5C430NL , NTMFS5C442N , NTMFS5C450N , NTMFS5C450NL , NTMFS5C456NL .

History: CEH2310 | MMIX1F360N15T2 | NCE50NF600I | BUK9Y4R4-40E | CHM2307GP | 2N6917 | RFP22N10

 

 
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