NTMFS5C450N Todos los transistores

 

NTMFS5C450N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C450N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 102 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 830 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: DFN5
 

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NTMFS5C450N Datasheet (PDF)

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NTMFS5C450N

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

 0.1. Size:122K  1
ntmfs5c450nlt3g.pdf pdf_icon

NTMFS5C450N

NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

 0.2. Size:169K  1
ntmfs5c450nt3g.pdf pdf_icon

NTMFS5C450N

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

 0.3. Size:122K  onsemi
ntmfs5c450nl.pdf pdf_icon

NTMFS5C450N

NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

Otros transistores... NTMFS5C404N , NTMFS5C406N , NTMFS5C406NL , NTMFS5C410N , NTMFS5C426N , NTMFS5C430N , NTMFS5C430NL , NTMFS5C442N , AO3407 , NTMFS5C450NL , NTMFS5C456NL , NTMFS5C460NL , NTMFS5C468NL , NTMFS5C609NL , NTMFS5C628N , NTMFS5C628NL , NTMFS5C645NL .

History: AON6667 | SIHFI740G

 

 
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