NTMFS5C609NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C609NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 167 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 250 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 51 nS
Cossⓘ - Capacitancia de salida: 2953 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00136 Ohm
Paquete / Cubierta: DFN5
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NTMFS5C609NL Datasheet (PDF)
ntmfs5c609nl.pdf
NTMFS5C609NLPower MOSFET60 V, 1.36 mW, 250 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX1.36 mW @ 10 VMAXIMUM RATINGS (TJ = 25C un
ntmfs5c609nlt1g.pdf
NTMFS5C609NLPower MOSFET60 V, 1.36 mW, 250 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX1.36 mW @ 10 VMAXIMUM RATINGS (TJ = 25C un
ntmfs5c604nlt1g.pdf
NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60
ntmfs5c604nlt3g.pdf
MOSFET Power, Single,N-Channel60 V, 1.2 mW, 287 ANTMFS5C604NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.2 mW @ 10 V60 V287 A1.7 mW @ 4.5 VMAXIMUM RATINGS (TJ =
ntmfs5c604nl.pdf
NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
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