NTMFS5C609NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5C609NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 167 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 250 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 51 nS

Cossⓘ - Capacitancia de salida: 2953 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00136 Ohm

Encapsulados: DFN5

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NTMFS5C609NL datasheet

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 ntmfs5c609nl.pdf pdf_icon

NTMFS5C609NL

NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un

 0.1. Size:76K  1
 ntmfs5c609nlt1g.pdf pdf_icon

NTMFS5C609NL

NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un

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 ntmfs5c604nlt1g.pdf pdf_icon

NTMFS5C609NL

NTMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.2 mW @ 10 V 60

 5.2. Size:202K  1
 ntmfs5c604nlt3g.pdf pdf_icon

NTMFS5C609NL

MOSFET Power, Single, N-Channel 60 V, 1.2 mW, 287 A NTMFS5C604NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.2 mW @ 10 V 60 V 287 A 1.7 mW @ 4.5 V MAXIMUM RATINGS (TJ =

MOSTRAR MÁS

Otros transistores... NTMFS5C430N, NTMFS5C430NL, NTMFS5C442N, NTMFS5C450N, NTMFS5C450NL, NTMFS5C456NL, NTMFS5C460NL, NTMFS5C468NL, IRFZ44N, NTMFS5C628N, NTMFS5C628NL, NTMFS5C645NL, NTMFS5C646N, NTMFS5C670N, NTMFS5C673N, NTMFS5C673NL, NTMFS5C677NL