NTMFS5C682NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C682NL
Código: 5C682L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 28 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 5 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 210 pF
Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS5C682NL
NTMFS5C682NL Datasheet (PDF)
ntmfs5c682nl.pdf
NTMFS5C682NLMOSFET Power, Single,N-Channel60 V, 21 mW, 25 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS21 mW @ 10 V60 V 25 ACompliant31.5 mW @ 4.5 VMA
ntmfs5c628nlt1g.pdf
NTMFS5C628NLPower MOSFET60 V, 2.4 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.4 mW @ 10 V60
ntmfs5c604nlt1g.pdf
NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60
ntmfs5c612nt1g-te.pdf
MOSFET Power, Single,N-Channel60 V, 1.6 mW, 230 ANTMFS5C612NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX60 V 1.6 mW @ 10 V 230 AMAXIMUM RATINGS (TJ = 25C unless otherw
ntmfs5c646nlt3g.pdf
NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles
ntmfs5c673nt1g.pdf
MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANTMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 10.7 mW @ 10 V 50 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs5c645nlt3g.pdf
NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60
ntmfs5c646nlt1g.pdf
NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles
ntmfs5c670nlt3g.pdf
NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V
ntmfs5c612nlt1g.pdf
NTMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl
ntmfs5c604nlt3g.pdf
MOSFET Power, Single,N-Channel60 V, 1.2 mW, 287 ANTMFS5C604NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.2 mW @ 10 V60 V287 A1.7 mW @ 4.5 VMAXIMUM RATINGS (TJ =
ntmfs5c609nlt1g.pdf
NTMFS5C609NLPower MOSFET60 V, 1.36 mW, 250 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX1.36 mW @ 10 VMAXIMUM RATINGS (TJ = 25C un
ntmfs5c673nlt1g.pdf
NTMFS5C673NLPower MOSFET60 V, 9.2 mW, 50 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)9.2 mW @ 10 V60 V
ntmfs5c645nlt1g.pdf
NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60
ntmfs5c628nt1g.pdf
NTMFS5C628NMOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX60 V 3.0 mW @ 10 V 150 AMAXIMUM RATINGS (TJ = 25C unless otherwis
ntmfs5c670nt1g.pdf
MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis
ntmfs5c612nl.pdf
NTMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl
ntmfs5c604nl.pdf
NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60
ntmfs5c646n.pdf
MOSFET Power, Single,N-Channel60 V, 5.0 mW, 93 ANTMFS5C646NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 5.0 mW @ 10 V 93 ACompliantMAXIMUM RATINGS (T
ntmfs5c670n.pdf
MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis
ntmfs5c673nl.pdf
NTMFS5C673NLPower MOSFET60 V, 9.2 mW, 50 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)9.2 mW @ 10 V60 V
ntmfs5c673n.pdf
MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANTMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 10.7 mW @ 10 V 50 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs5c677nl.pdf
NTMFS5C677NLPower MOSFET60 V, 15.0 mW, 36 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol V
ntmfs5c628nl.pdf
NTMFS5C628NLPower MOSFET60 V, 2.4 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.4 mW @ 10 V60
ntmfs5c670nl.pdf
NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V
ntmfs5c645nl.pdf
NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60
ntmfs5c646nl.pdf
NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.7 mW @ 10 V60 V
ntmfs5c609nl.pdf
NTMFS5C609NLPower MOSFET60 V, 1.36 mW, 250 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX1.36 mW @ 10 VMAXIMUM RATINGS (TJ = 25C un
ntmfs5c628n.pdf
NTMFS5C628NMOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX60 V 3.0 mW @ 10 V 150 AMAXIMUM RATINGS (TJ = 25C unless otherwis
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C