NTMFS5H400NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5H400NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 330 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 1800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0008 Ohm

Encapsulados: DFN5

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NTMFS5H400NL datasheet

 ..1. Size:174K  onsemi
 ntmfs5h400nl.pdf pdf_icon

NTMFS5H400NL

NTMFS5H400NL MOSFET Power, Single, N-Channel 40 V, 0.80 mW, 330 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.80 mW @ 10 V 40 V 330 A MAXIMUM RATINGS (TJ = 25 C unless

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 ntmfs5h409nl.pdf pdf_icon

NTMFS5H400NL

NTMFS5H409NL MOSFET Power, Single, N-Channel 40 V, 1.1 mW, 270 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.1 mW @ 10 V 40 V 270 A MAXIMUM RATINGS (TJ = 25 C unless ot

 6.1. Size:171K  1
 ntmfs5h425nlt1g.pdf pdf_icon

NTMFS5H400NL

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

 6.2. Size:171K  onsemi
 ntmfs5h425nl.pdf pdf_icon

NTMFS5H400NL

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

MOSTRAR MÁS

Otros transistores... NTMFS5C628NL, NTMFS5C645NL, NTMFS5C646N, NTMFS5C670N, NTMFS5C673N, NTMFS5C673NL, NTMFS5C677NL, NTMFS5C682NL, IRF640, NTMFS5H409NL, NTMFS5H414NL, NTMFS5H419NL, NTMFS5H425NL, NTMFS5H431NL, NTMFS5H600NL, NTMFS5H610NL, NTMFS5H615NL