NTMFS5H414NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5H414NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 210 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52.3 nS
Cossⓘ - Capacitancia de salida: 985 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS5H414NL
NTMFS5H414NL Datasheet (PDF)
ntmfs5h414nl.pdf
NTMFS5H414NLMOSFET Single,N-Channel40 V, 1.4 mW, 210 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V210 AMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h419nl.pdf
NTMFS5H419NLMOSFET Power, Single,N-Channel40 V, 2.1 mW, 155 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.1 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h425nlt1g.pdf
NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h425nl.pdf
NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h431nl.pdf
NTMFS5H431NLMOSFET Power, Single,N-Channel40 V, 3.3 mW, 106 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX3.3 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5h400nl.pdf
NTMFS5H400NLMOSFET Power, Single,N-Channel40 V, 0.80 mW, 330 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.80 mW @ 10 V40 V330 AMAXIMUM RATINGS (TJ = 25C unless
ntmfs5h409nl.pdf
NTMFS5H409NLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 270 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.1 mW @ 10 V40 V270 AMAXIMUM RATINGS (TJ = 25C unless ot
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FDS86540 | CS15N50P | IRFP4232
History: FDS86540 | CS15N50P | IRFP4232
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918