NTMFS5H600NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMFS5H600NL
   Código: 5H600L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 160 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 250 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 89 nC
   Tiempo de subida (tr): 20.7 nS
   Conductancia de drenaje-sustrato (Cd): 1230 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0013 Ohm
   Paquete / Cubierta: DFN5

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NTMFS5H600NL Datasheet (PDF)

..1. Size:207K onsemi
ntmfs5h600nl.pdf

MOSFET Power, Single,N-Channel60 V, 1.3 mW, 250 ANTMFS5H600NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.3 mW @ 10 V60 V250 AMAXIMUM RATINGS (TJ = 25C unless ot

6.1. Size:174K onsemi
ntmfs5h610nl.pdf

NTMFS5H610NLMOSFET Power, Single,N-Channel60 V, 10 mW, 44 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @ 10 V60 V44 AMAXIMUM RATINGS (TJ = 25C unless otherw

6.2. Size:171K onsemi
ntmfs5h630nl.pdf

MOSFET Power, Single,N-Channel60 V, 3.1 mW, 120 ANTMFS5H630NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.1 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted

6.3. Size:173K onsemi
ntmfs5h615nl.pdf

NTMFS5H615NLMOSFET Power, Single,N-Channel60 V, 1.8 mW, 185 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX1.8 mW @ 10 V60 VMAXIMUM RATINGS (TJ = 25C unless otherwise

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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