NTMFS5H615NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5H615NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 185 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 116 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: DFN5

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NTMFS5H615NL datasheet

 ..1. Size:173K  onsemi
 ntmfs5h615nl.pdf pdf_icon

NTMFS5H615NL

NTMFS5H615NL MOSFET Power, Single, N-Channel 60 V, 1.8 mW, 185 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.8 mW @ 10 V 60 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

 5.1. Size:174K  onsemi
 ntmfs5h610nl.pdf pdf_icon

NTMFS5H615NL

NTMFS5H610NL MOSFET Power, Single, N-Channel 60 V, 10 mW, 44 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @ 10 V 60 V 44 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 6.1. Size:207K  onsemi
 ntmfs5h600nl.pdf pdf_icon

NTMFS5H615NL

MOSFET Power, Single, N-Channel 60 V, 1.3 mW, 250 A NTMFS5H600NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.3 mW @ 10 V 60 V 250 A MAXIMUM RATINGS (TJ = 25 C unless ot

 6.2. Size:171K  onsemi
 ntmfs5h630nl.pdf pdf_icon

NTMFS5H615NL

MOSFET Power, Single, N-Channel 60 V, 3.1 mW, 120 A NTMFS5H630NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

MOSTRAR MÁS

Otros transistores... NTMFS5H400NL, NTMFS5H409NL, NTMFS5H414NL, NTMFS5H419NL, NTMFS5H425NL, NTMFS5H431NL, NTMFS5H600NL, NTMFS5H610NL, IRF3710, NTMFS5H630NL, NTMFS6D1N08H, NTMFS6H800N, NTMFS6H800NL, NTMFS6H801N, NTMFS6H801NL, NTMFS6H818N, NTMFS6H818NL