NTMFS6H800N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS6H800N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 203 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 89 nS

Cossⓘ - Capacitancia de salida: 760 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm

Encapsulados: DFN5

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NTMFS6H800N datasheet

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 ntmfs6h800n.pdf pdf_icon

NTMFS6H800N

NTMFS6H800N MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 2.1 mW @ 10 V 203 A MAXIMUM RATINGS (TJ = 25 C unless other

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 ntmfs6h800nl.pdf pdf_icon

NTMFS6H800N

NTMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol V

 5.1. Size:98K  1
 ntmfs6h801nt1g.pdf pdf_icon

NTMFS6H800N

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V

 5.2. Size:98K  onsemi
 ntmfs6h801n.pdf pdf_icon

NTMFS6H800N

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V

MOSTRAR MÁS

Otros transistores... NTMFS5H419NL, NTMFS5H425NL, NTMFS5H431NL, NTMFS5H600NL, NTMFS5H610NL, NTMFS5H615NL, NTMFS5H630NL, NTMFS6D1N08H, IRFB4115, NTMFS6H800NL, NTMFS6H801N, NTMFS6H801NL, NTMFS6H818N, NTMFS6H818NL, NTMFS6H836N, NTMFS6H836NL, NTMFS6H848NL