NTTFS004N04C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS004N04C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 77 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm

Encapsulados: WDFN8

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NTTFS004N04C datasheet

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 nttfs004n04c.pdf pdf_icon

NTTFS004N04C

NTTFS004N04C MOSFET Power, Single, N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 4.9 mW @ 10 V 77 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

 7.1. Size:193K  onsemi
 nttfs005n04c.pdf pdf_icon

NTTFS004N04C

NTTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Val

 7.2. Size:188K  onsemi
 nttfs008n04c.pdf pdf_icon

NTTFS004N04C

NTTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(on) MAX ID MAX Parameter Symbol Val

 7.3. Size:196K  onsemi
 nttfs003n04c.pdf pdf_icon

NTTFS004N04C

NTTFS003N04C MOSFET Power, Single, N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 3.5 mW @ 10 V 103 A MAXIMUM RATINGS (TJ = 25 C unless otherw

MOSTRAR MÁS

Otros transistores... NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ, NTR3C21NZ, NTTFS002N04C, NTTFS002N04CL, NTTFS003N04C, IRFP250, NTTFS005N04C, NTTFS008N04C, NTTFS010N10MCL, NTTFS015N04C, NTTFS015P03P8Z, NTTFS016N06C, NTTFS020N06C, NTTFS024N06C