NTTFS5C460NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS5C460NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 74 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 97 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm

Encapsulados: WDFN8

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NTTFS5C460NL datasheet

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 nttfs5c460nl.pdf pdf_icon

NTTFS5C460NL

NTTFS5C460NL MOSFET Power, Single, N-Channel 40 V, 4.8 mW, 74 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.8 mW @ 10 V 40 V 74 A MAXIMUM RATINGS (TJ = 25 C unless otherw

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 nttfs5c466nl.pdf pdf_icon

NTTFS5C460NL

MOSFET Power, Single, N-Channel 40 V, 7.3 mW, 51 A NTTFS5C466NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 7.3 mW @ 10 V 40 V 51 A MAXIMUM RATINGS (TJ = 25 C unless otherw

 6.1. Size:76K  1
 nttfs5c454nltag.pdf pdf_icon

NTTFS5C460NL

NTTFS5C454NL Power MOSFET 40 V, 3.8 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C

 6.2. Size:199K  onsemi
 nttfs5c478nl.pdf pdf_icon

NTTFS5C460NL

MOSFET Power, Single N-Channel 40 V, 14 mW, 26 A NTTFS5C478NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 14 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40

MOSTRAR MÁS

Otros transistores... NTTFS020N06C, NTTFS024N06C, NTTFS030N06C, NTTFS1D2N02P1E, NTTFS2D8N04HL, NTTFS4C02N, NTTFS5C453NL, NTTFS5C454NL, 8N60, NTTFS5C466NL, NTTFS5C471NL, NTTFS5C478NL, NTTFS5C658NL, NTTFS5C670NL, NTTFS5C673NL, NTTFS5C680NL, NTTFS5CS70NL