NTTFS6H850NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS6H850NL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 73 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 64 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 182 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
Encapsulados: WDFN8
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NTTFS6H850NL datasheet
nttfs6h850nl.pdf
NTTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 8.6 mW @ 10 V Param
nttfs6h850n.pdf
NTTFS6H850N MOSFET Power, Single, N-Channel 80 V, 9.5 mW, 68 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 80 V 9.5 mW @ 10 V 68 A MAXIMUM RATINGS (TJ = 25 C unless otherwise
nttfs6h854nl.pdf
MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NTTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 13.4 mW @ 10 V
nttfs6h860nl.pdf
MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NTTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 20 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V
Otros transistores... NTTFS5C478NL, NTTFS5C658NL, NTTFS5C670NL, NTTFS5C673NL, NTTFS5C680NL, NTTFS5CS70NL, NTTFS5D1N06HL, NTTFS6H850N, IRFB31N20D, NTTFS6H854NL, NTTFS6H860NL, NTTFS6H880NL, NTTFS8D1N08H, NTUD3174NZ, NTZD3158P, NVATS4A103PZ, NVATS5A106PLZ
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7619DN
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