NTTFS6H880NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS6H880NL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: WDFN8

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NTTFS6H880NL datasheet

 ..1. Size:197K  onsemi
 nttfs6h880nl.pdf pdf_icon

NTTFS6H880NL

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NTTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 29 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

 6.1. Size:196K  onsemi
 nttfs6h850n.pdf pdf_icon

NTTFS6H880NL

NTTFS6H850N MOSFET Power, Single, N-Channel 80 V, 9.5 mW, 68 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 80 V 9.5 mW @ 10 V 68 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

 6.2. Size:197K  onsemi
 nttfs6h860nl.pdf pdf_icon

NTTFS6H880NL

MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NTTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 20 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V

 6.3. Size:201K  onsemi
 nttfs6h854nl.pdf pdf_icon

NTTFS6H880NL

MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NTTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 13.4 mW @ 10 V

MOSTRAR MÁS

Otros transistores... NTTFS5C673NL, NTTFS5C680NL, NTTFS5CS70NL, NTTFS5D1N06HL, NTTFS6H850N, NTTFS6H850NL, NTTFS6H854NL, NTTFS6H860NL, IRF520, NTTFS8D1N08H, NTUD3174NZ, NTZD3158P, NVATS4A103PZ, NVATS5A106PLZ, PM2301, PM2302, PM3400