NTZD3158P Todos los transistores

 

NTZD3158P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTZD3158P

Código: TJ*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.25 W

Tensión drenaje-fuente |Vds|: 20 V

Tensión compuerta-fuente |Vgs|: 6 V

Corriente continua de drenaje |Id|: 0.43 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 1 V

Carga de compuerta (Qg): 1.7 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 15 pF

Resistencia drenaje-fuente RDS(on): 0.9 Ohm

Empaquetado / Estuche: SOT563-6

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NTZD3158P Datasheet (PDF)

0.1. ntzd3158p.pdf Size:104K _onsemi

NTZD3158P
NTZD3158P

NTZD3158PSmall Signal MOSFET-20 V, -430 mA, Dual P-Channelwith ESD Protection, SOT-563Featureshttp://onsemi.com Low RDS(on) Improving System Efficiency Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max ESD Protected Gate0.5 W @ -4.5 V Small Footprint 1.6 x 1.6 mm-20 V 0.6 W @ -2.5 V -430 mA These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.

7.1. ntzd3155ct1g.pdf Size:114K _onsemi

NTZD3158P
NTZD3158P

NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Featureshttp://onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System PerformanceID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate0.4 W @ 4.5 VN-Channel0.5 W @ 2.5 V 540 mA Small Footprint 1.

7.2. ntzd3155c.pdf Size:215K _onsemi

NTZD3158P
NTZD3158P

NTZD3155CMOSFET Small Signal,Complementary with ESDProtection, SOT-56320 V, 540 mA / -430 mAwww.onsemi.comFeaturesID Max Leading Trench Technology for Low RDS(on) PerformanceV(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance0.4 W @ 4.5 V Low Threshold VoltageN-Channel0.5 W @ 2.5 V 540 mA20 V ESD Protected Gate0.7 W @ 1.8 V Sma

 7.3. ntzd3154nt1g.pdf Size:57K _onsemi

NTZD3158P
NTZD3158P

NTZD3154NSmall Signal MOSFET20 V, 540 mA, Dual N-ChannelFeatures Low RDS(on) Improving System Efficiency Low Threshold Voltagehttp://onsemi.com Small Footprint 1.6 x 1.6 mm ESD Protected GateV(BR)DSS RDS(on) TYP ID Max (Note 1) These are Pb-Free Devices400 mW @ 4.5 VApplications20 500 mW @ 2.5 V 540 mA Load/Power Switches700 mW @ 1.8 V Power

7.4. ntzd3154n.pdf Size:139K _onsemi

NTZD3158P
NTZD3158P

NTZD3154NSmall Signal MOSFET20 V, 540 mA, Dual N-ChannelFeatures Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max (Note 1) Small Footprint 1.6 x 1.6 mm ESD Protected Gate 400 mW @ 4.5 V20 500 mW @ 2.5 V 540 mA These are Pb-Free Devices700 mW @ 1.8 VApplications Load/Power SwitchesD1 D2 P

 7.5. ntzd3156c-d.pdf Size:119K _onsemi

NTZD3158P
NTZD3158P

NTZD3156CSmall Signal MOSFET20 V, 540 mA / -20 V, -430 mAComplementary N- and P-ChannelMOSFETs with Integrated Pull Up/DownResistor and ESD Protectionhttp://onsemi.comFeaturesID Max Leading Trench Technology for Low RDS(on) PerformanceV(BR)DSS RDS(on) Max (Note 1) High Efficiency System Performance0.55 W @ 4.5 V Low Threshold VoltageN-Channel0.7 W @ 2.5 V

7.6. ntzd3155c-d.pdf Size:111K _onsemi

NTZD3158P
NTZD3158P

NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Features http://onsemi.com Leading Trench Technology for Low RDS(on) PerformanceID Max High Efficiency System PerformanceV(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage0.4 W @ 4.5 V ESD Protected Gate N-Channel0.5 W @ 2.5 V 540 mA20 V Small Footpri

7.7. ntzd3152p.pdf Size:98K _onsemi

NTZD3158P
NTZD3158P

NTZD3152PSmall Signal MOSFET-20 V, -430 mA, Dual P-Channelwith ESD Protection, SOT-563Features http://onsemi.com Low RDS(on) Improving System EfficiencyV(BR)DSS RDS(on) Typ ID Max Low Threshold Voltage0.5 W @ -4.5 V ESD Protected Gate-20 V 0.6 W @ -2.5 V -430 mA Small Footprint 1.6 x 1.6 mm1.0 W @ -1.8 V These are Pb-Free DevicesD1 D2Applications

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