PM3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

HPM3401P-Channel MOSFETs-3.8A,-30VP PHPM3401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -3.8A, RDS(ON)=50m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLead f

HPM3401AP-Channel MOSFETs-4.2A,-30VPP HPM3401AP-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -4.2A, RDS(ON)=53m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLe