PM3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PM3401
Código: 3401
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.35 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.3 V
Tiempo de subida (tr): 3.2(max) nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 0.055 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET PM3401
PM3401 Datasheet (PDF)
pm3401.pdf
PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON
wpm3401.pdf
WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz
wpm3401.pdf
Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co
lpm3401.pdf
Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
