PM3401 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PM3401 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PM3401

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 max nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: SOT23

Búsqueda de reemplazo de PM3401 MOSFET

- Selecciónⓘ de transistores por parámetros

PM3401 datasheet

..1. Size:354K pn silicon
pm3401.pdf pdf_icon

PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON) This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON

0.1. Size:2014K willsemi
wpm3401.pdf pdf_icon

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m ) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

0.2. Size:439K tysemi
wpm3401.pdf pdf_icon

Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

0.3. Size:375K lowpower
lpm3401.pdf pdf_icon

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON) 58m (typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON) 68m (typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

Otros transistores... NTTFS8D1N08H, NTUD3174NZ, NTZD3158P, NVATS4A103PZ, NVATS5A106PLZ, PM2301, PM2302, PM3400, AO4468, KS2302AA, SI12N60-F, SI12N60, SI20N03, SI25N10, SI3400, SI3401, SI3403

PM3401 Todos los transistores