SI3406 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3406

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.9 nS

Cossⓘ - Capacitancia de salida: 57 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: SOT23

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SI3406 datasheet

 ..1. Size:3004K  cn szxunrui
si3406.pdf pdf_icon

SI3406

SOT-23 Plastic-Encapsulate MOSFETS SI3406 N-Channel 30-V(D-S) MOSFET SI3406 V(BR)DSS RDS(on)MAX ID SOT-23 0.065 @ 10V 3 30V 3.6 A 1.GATE 0.105 @ 4.5 V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Equivalent Circuit Lead free product is acquired MARKING Surface mount package A69TF w APPLICATION Load Switch for Portable Devices DC/DC Conver

 9.1. Size:192K  vishay
si3407dv.pdf pdf_icon

SI3406

Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET - 20 21 nC PWM Optimized 0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9

 9.2. Size:98K  vishay
si3403dv.pdf pdf_icon

SI3406

Si3403DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.07 at VGS = - 4.5 V - 5 - 20 4.5 nC PWM Optimized, Low Qgd/Qgs Ratio 0.105 at VGS = - 2.5 V - 4.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switc

 9.3. Size:356K  vishay
si3404.pdf pdf_icon

SI3406

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI3404 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel High dense cell design for extremely low RDS(ON) Rugged and reliable Enhancement Mode Lead free product is acquired SOT-23 Package Field Effect Transistor Marking Code R4 Epoxy mee

Otros transistores... KS2302AA, SI12N60-F, SI12N60, SI20N03, SI25N10, SI3400, SI3401, SI3403, 50N06, SI4260, SI4430, SI4614, SI4953, SI4N60-TA3-T, SI4N60-TF3-T, SI4N60-TM3-T, SI4N60-TN3-R