NVATS68301PZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVATS68301PZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 84 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: ATPAK
Búsqueda de reemplazo de NVATS68301PZ MOSFET
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NVATS68301PZ datasheet
nvats68301pz.pdf
NVATS68301PZ Power MOSFET 100 V, 75 m , 31 A, P-Channel The NVATS68301PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance High Current Capability 100 V
nvats5a114plz.pdf
NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V
nvats5a107plz.pdf
NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40
nvats5a304plz.pdf
NVATS5A304PLZ Power MOSFET 60 V, 6.5 m , 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu
Otros transistores... TX216521M6R, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, AON6380, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F, NVBF170L, NVBG020N120SC1, NVBG040N120SC1
History: DMN62D1SFB
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