NVATS68301PZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVATS68301PZ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: ATPAK

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NVATS68301PZ datasheet

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NVATS68301PZ

NVATS68301PZ Power MOSFET 100 V, 75 m , 31 A, P-Channel The NVATS68301PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance High Current Capability 100 V

 9.1. Size:941K  onsemi
nvats5a114plz.pdf pdf_icon

NVATS68301PZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V

 9.2. Size:805K  onsemi
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NVATS68301PZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 9.3. Size:862K  onsemi
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NVATS68301PZ

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m , 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu

Otros transistores... TX216521M6R, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, AON6380, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F, NVBF170L, NVBG020N120SC1, NVBG040N120SC1