NVBG020N120SC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVBG020N120SC1 Datasheet (PDF)

..1. Size:360K onsemi
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MOSFET - Power, Silicon Carbide, Single N-ChannelD2PAK7L, 1200 V, 98 A, 20 mOhmNVBG020N120SC1Features Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 220 nC) Low Effective Output Capacitance (typ. Coss = 258 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 28 mW @ 20 V 98 A Qualified According to AEC-Q101 RoHS Compli

9.1. Size:798K onsemi
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MOSFET - SiC Power, SingleN-Channel, D2PAK-7L900 V, 60 mW, 44 ANVBG060N090SC1Features Typ. RDS(on) = 60 mW @ VGS = 18 V Typ. RDS(on) = 43 mW @ VGS = 18 Vwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 88 nC) High Speed Switching with Low Capacitance (Coss = 115 pF) 100% Avalanche Tested V(BR)DSS RDS(ON) MAX ID MAX TJ = 175C900 V 84 mW @ 15 V 44 A

9.2. Size:327K onsemi
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MOSFET SiC Power, SingleN-Channel, D2PAK-7L1200 V, 80 mW, 30 ANVBG080N120SC1Featureswww.onsemi.com Typ. RDS(on) = 80 mW Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) Low Effective Output Capacitance (Typ. Coss = 79 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 110 mW @ 20 V 30 A Qualified According to AEC-Q101 This Device is Pb-Free an

9.3. Size:337K onsemi
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MOSFET SiC Power, SingleN-Channel, D2PAK-7L1200 V, 40 mW, 60 ANVBG040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) Low Effective Output Capacitance (Typ. Coss = 139 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested AEC-Q101 Qualified and PPAP Capable 1200 V 56 mW @ 20 V 60 A This Device is Pb-Fre

Otros transistores... NVATS5A304PLZ , NVATS68301PZ , NVB072N65S3 , NVB082N65S3F , NVB110N65S3F , NVB150N65S3F , NVB190N65S3F , NVBF170L , IRFZ24N , NVBG040N120SC1 , NVBG060N090SC1 , NVBG080N120SC1 , NVBG160N120SC1 , NVBGS4D1N15MC , NVBGS6D5N15MC , NVBLS001N06C , NVBLS0D5N04M8 .