NVBG040N120SC1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVBG040N120SC1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 139 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm

Encapsulados: D2PAK-7L

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NVBG040N120SC1 datasheet

 ..1. Size:337K  onsemi
 nvbg040n120sc1.pdf pdf_icon

NVBG040N120SC1

MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 mW, 60 A NVBG040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) Low Effective Output Capacitance (Typ. Coss = 139 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested AEC-Q101 Qualified and PPAP Capable 1200 V 56 mW @ 20 V 60 A This Device is Pb-Fre

 9.1. Size:798K  onsemi
 nvbg060n090sc1.pdf pdf_icon

NVBG040N120SC1

MOSFET - SiC Power, Single N-Channel, D2PAK-7L 900 V, 60 mW, 44 A NVBG060N090SC1 Features Typ. RDS(on) = 60 mW @ VGS = 18 V Typ. RDS(on) = 43 mW @ VGS = 18 V www.onsemi.com Ultra Low Gate Charge (QG(tot) = 88 nC) High Speed Switching with Low Capacitance (Coss = 115 pF) 100% Avalanche Tested V(BR)DSS RDS(ON) MAX ID MAX TJ = 175 C 900 V 84 mW @ 15 V 44 A

 9.2. Size:360K  onsemi
 nvbg020n120sc1.pdf pdf_icon

NVBG040N120SC1

MOSFET - Power, Silicon Carbide, Single N-Channel D2PAK7L, 1200 V, 98 A, 20 mOhm NVBG020N120SC1 Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 220 nC) Low Effective Output Capacitance (typ. Coss = 258 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 28 mW @ 20 V 98 A Qualified According to AEC-Q101 RoHS Compli

 9.3. Size:327K  onsemi
 nvbg080n120sc1.pdf pdf_icon

NVBG040N120SC1

MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 mW, 30 A NVBG080N120SC1 Features www.onsemi.com Typ. RDS(on) = 80 mW Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) Low Effective Output Capacitance (Typ. Coss = 79 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 110 mW @ 20 V 30 A Qualified According to AEC-Q101 This Device is Pb-Free an

MOSTRAR MÁS

Otros transistores... NVATS68301PZ, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F, NVBF170L, NVBG020N120SC1, AO4407, NVBG060N090SC1, NVBG080N120SC1, NVBG160N120SC1, NVBGS4D1N15MC, NVBGS6D5N15MC, NVBLS001N06C, NVBLS0D5N04M8, NVBLS0D7N04M8